We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
IPD80R1K2P7ATMA1 DISTI # V36:1790_18204698 | Infineon Technologies AG | IPD80R1K2P7ATMA1 | 0 |
|
IPD80R1K2P7ATMA1 DISTI # IPD80R1K2P7ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 800V 4.5A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2480In Stock |
|
IPD80R1K2P7ATMA1 DISTI # IPD80R1K2P7ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 800V 4.5A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2480In Stock |
|
IPD80R1K2P7ATMA1 DISTI # IPD80R1K2P7ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 800V 4.5A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | On Order |
|
IPD80R1K2P7ATMA1 DISTI # IPD80R1K2P7ATMA1 | Infineon Technologies AG | LOW POWER_NEW - Tape and Reel (Alt: IPD80R1K2P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
IPD80R1K2P7ATMA1 DISTI # SP001644252 | Infineon Technologies AG | LOW POWER_NEW (Alt: SP001644252) RoHS: Compliant Min Qty: 2500 | Europe - 0 |
|
IPD80R1K2P7ATMA1 DISTI # 24AC9041 | Infineon Technologies AG | MOSFET, N-CH, 800V, 4.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes | 0 |
|
IPD80R1K2P7ATMA1 DISTI # 726-IPD80R1K2P7ATMA1 | Infineon Technologies AG | MOSFET RoHS: Compliant | 2099 |
|
IPD80R1K2P7ATMA1 DISTI # IPD80R1K2P7 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,800V,3.1A,37W,PG-TO252-3 | 2497 |
|
IPD80R1K2P7ATMA1 DISTI # 2771319 | Infineon Technologies AG | MOSFET, N-CH, 800V, 4.5A, TO-252 RoHS: Compliant | 0 |
|
IPD80R1K2P7ATMA1 DISTI # 2771319 | Infineon Technologies AG | MOSFET, N-CH, 800V, 4.5A, TO-252 | 229 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: IPD80R1K4P7ATMA1 OMO.#: OMO-IPD80R1K4P7ATMA1 |
MOSFET | |
Mfr.#: IPD80R1K4CEATMA1 OMO.#: OMO-IPD80R1K4CEATMA1 |
MOSFET N-Ch 800V 3.9A DPAK-2 | |
Mfr.#: IPD80R1K4CEBTMA1 OMO.#: OMO-IPD80R1K4CEBTMA1 |
MOSFET N-Ch 800V 3.9A DPAK-2 | |
Mfr.#: IPD80R1K4P7ATMA1-CUT TAPE |
Nuevo y original | |
Mfr.#: IPD80R1K0CE OMO.#: OMO-IPD80R1K0CE-1190 |
Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE) | |
Mfr.#: IPD80R1K0CEATMA1 |
MOSFET N-CH 800V 5.7A TO252-3 | |
Mfr.#: IPD80R1K0CEBTMA1 , 2SD24 |
Nuevo y original | |
Mfr.#: IPD80R1K2P7ATMA1 |
MOSFET N-CH 800V 4.5A TO252-3 | |
Mfr.#: IPD80R1K4CEATMA1 , 2SD24 |
Nuevo y original | |
Mfr.#: IPD80R1K4CEATMA1 |
MOSFET N-Ch 800V 3.9A DPAK-2 |