IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1
Mfr. #:
IPD80R1K4CEBTMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 800V 3.9A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD80R1K4CEBTMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPD80R1
embalaje
Carrete
Alias ​​de parte
IPD80R1K4CE SP001100604
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
63 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
15 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
3.9 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
1.4 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
72 ns
Tiempo de retardo de encendido típico
25 ns
Qg-Gate-Charge
23 nC
Tags
IPD80R1K4C, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R
***ical
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 800V 3.9A TO252-3
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
Parte # Mfg. Descripción Valores Precio
IPD80R1K4CEBTMA1
DISTI # IPD80R1K4CEBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    IPD80R1K4CEBTMA1
    DISTI # IPD80R1K4CEBTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPD80R1K4CEBTMA1
      DISTI # IPD80R1K4CEBTMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
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        Mfr.#: IPD80R1K2P7ATMA1-CUT TAPE

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        OMO.#: OMO-IPD80R1K4CEBTMA1-2SD24-1190

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        OMO.#: OMO-IPD80R1K4P7-1190

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        Mfr.#: IPD80R1K4P7ATMA1

        OMO.#: OMO-IPD80R1K4P7ATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 800V 4A DPAK
        Disponibilidad
        Valores:
        Available
        En orden:
        2000
        Ingrese la cantidad:
        El precio actual de IPD80R1K4CEBTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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