SI7112DN-T1-GE3

Mfr. #:: SI7112DN-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI7112DN-T1-GE3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PowerPAK-1212-8

Nombre comercial:: TrenchFET

Embalaje:: Carrete

Altura:: 1.04 mm

Longitud:: 3.3 mm

Serie:: SI7

Ancho:: 3.3 mm

Marca:: Vishay / Siliconix

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Parte # Alias:: SI7112DN-GE3

Tags: SI7112DN-T, SI7112D, SI7112, SI711, SI71, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7112DN-T1-GE3 Descripción

***et: Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R

***ark: MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8

***ment14 APAC: MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-

***i-Key: MOSFET N-CH 30V 11.3A 1212-8

***nell: MOSFET, N CH, 30V, 11.3A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.7170
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.7913 500:$1.0023 100:$1.2924 10:$1.6350 1:$1.8500
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.7913 500:$1.0023 100:$1.2924 10:$1.6350 1:$1.8500
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7112DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.9749 6000:$0.9459 12000:$0.9069 18000:$0.8819 30000:$0.8579
SI7112DN-T1-GE3 DISTI # 69W7220	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mV, RoHS Compliant: Yes	0	1:$2.0900 25:$1.7300 50:$1.5400 100:$1.3400 250:$1.2600 500:$1.1800 1000:$0.9720
SI7112DN-T1-GE3 DISTI # 33P5375	Vishay Intertechnologies	MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.9920 3000:$0.9850 6000:$0.9380 12000:$0.8310
SI7112DN-T1-GE3 DISTI # 781-SI7112DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS: Compliant	0	1:$2.0900 10:$1.7300 100:$1.3400 500:$1.1800 1000:$0.9720 3000:$0.9050 6000:$0.8720 9000:$0.8710
SI7112DN-T1-GE3 DISTI # 2459429	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8 RoHS: Compliant	0	3000:$3.8500
SI7112DN-T1-GE3 DISTI # 2459429	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK RoHS: Compliant	0	3000:£0.8540

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI7112DN-T1-E3 OMO.#: OMO-SI7112DN-T1-E3	MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
	Mfr.#: SI7112DN-T1-GE3 OMO.#: OMO-SI7112DN-T1-GE3	MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
	Mfr.#: SI7112DN-T1-GE3 OMO.#: OMO-SI7112DN-T1-GE3-VISHAY	MOSFET N-CH 30V 11.3A 1212-8
	Mfr.#: SI7112DN-T1-E3-CUT TAPE OMO.#: OMO-SI7112DN-T1-E3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI7112DN OMO.#: OMO-SI7112DN-1190	Nuevo y original
	Mfr.#: SI7112DN-T1 OMO.#: OMO-SI7112DN-T1-1190	Nuevo y original
	Mfr.#: SI7112DN-T1-E3CT OMO.#: OMO-SI7112DN-T1-E3CT-1190	Nuevo y original
	Mfr.#: SI7112DN-T1-GE3CT OMO.#: OMO-SI7112DN-T1-GE3CT-1190	Nuevo y original
	Mfr.#: SI7112DN-T1-E3 OMO.#: OMO-SI7112DN-T1-E3-VISHAY	MOSFET N-CH 30V 11.3A 1212-8

Disponibilidad

Valores:: Available
En orden:: 1989
Ingrese la cantidad:

El precio actual de SI7112DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~2,08 US$~~; ~~2,08 US$~~

10: ~~1,72 US$~~; ~~17,20 US$~~

100: ~~1,34 US$~~; ~~134,00 US$~~

500: ~~1,17 US$~~; ~~585,00 US$~~

1000: ~~0,97 US$~~; ~~971,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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SI7112DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes