SI7112DN-T1-GE3

Mfr. #:: SI7112DN-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 30V 11.3A 1212-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI7112DN-T1-GE3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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Atributo del producto
Valor de atributo

Fabricante: VISHAY

categoria de producto: FET - Single

Serie: SI71xxDx

embalaje: Carrete

Alias de parte: SI7112DN-GE3

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAK-1212-8

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 1.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 10 ns

Hora de levantarse: 10 ns

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 11.3 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Resistencia a la fuente de desagüe de Rds: 7.5 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 65 ns

Tiempo de retardo de encendido típico: 10 ns

Modo de canal: Mejora

Tags: SI7112DN-T, SI7112D, SI7112, SI711, SI71, SI7

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7112DN-T1-GE3 Descripción

***et: Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R

***ark: MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8

***ment14 APAC: MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-

***i-Key: MOSFET N-CH 30V 11.3A 1212-8

***nell: MOSFET, N CH, 30V, 11.3A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.7170
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.7913 500:$1.0023 100:$1.2924 10:$1.6350 1:$1.8500
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.7913 500:$1.0023 100:$1.2924 10:$1.6350 1:$1.8500
SI7112DN-T1-GE3 DISTI # SI7112DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7112DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.9749 6000:$0.9459 12000:$0.9069 18000:$0.8819 30000:$0.8579
SI7112DN-T1-GE3 DISTI # 69W7220	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mV, RoHS Compliant: Yes	0	1:$2.0900 25:$1.7300 50:$1.5400 100:$1.3400 250:$1.2600 500:$1.1800 1000:$0.9720
SI7112DN-T1-GE3 DISTI # 33P5375	Vishay Intertechnologies	MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.9920 3000:$0.9850 6000:$0.9380 12000:$0.8310
SI7112DN-T1-GE3 DISTI # 781-SI7112DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS: Compliant	0	1:$2.0900 10:$1.7300 100:$1.3400 500:$1.1800 1000:$0.9720 3000:$0.9050 6000:$0.8720 9000:$0.8710
SI7112DN-T1-GE3 DISTI # 2459429	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8 RoHS: Compliant	0	3000:$3.8500
SI7112DN-T1-GE3 DISTI # 2459429	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK RoHS: Compliant	0	3000:£0.8540

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI7112DN-T1-E3 OMO.#: OMO-SI7112DN-T1-E3	MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
	Mfr.#: SI7112DN-T1-GE3 OMO.#: OMO-SI7112DN-T1-GE3	MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
	Mfr.#: SI7112DN-T1-GE3 OMO.#: OMO-SI7112DN-T1-GE3-VISHAY	MOSFET N-CH 30V 11.3A 1212-8
	Mfr.#: SI7112DN-T1-E3-CUT TAPE OMO.#: OMO-SI7112DN-T1-E3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI7112DN OMO.#: OMO-SI7112DN-1190	Nuevo y original
	Mfr.#: SI7112DN-T1 OMO.#: OMO-SI7112DN-T1-1190	Nuevo y original
	Mfr.#: SI7112DN-T1-E3CT OMO.#: OMO-SI7112DN-T1-E3CT-1190	Nuevo y original
	Mfr.#: SI7112DN-T1-GE3CT OMO.#: OMO-SI7112DN-T1-GE3CT-1190	Nuevo y original
	Mfr.#: SI7112DN-T1-E3 OMO.#: OMO-SI7112DN-T1-E3-VISHAY	MOSFET N-CH 30V 11.3A 1212-8

Disponibilidad

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En orden:: 4500
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El precio actual de SI7112DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,12 US$~~; ~~1,12 US$~~

10: ~~1,07 US$~~; ~~10,68 US$~~

100: ~~1,01 US$~~; ~~101,20 US$~~

500: ~~0,96 US$~~; ~~477,90 US$~~

1000: ~~0,90 US$~~; ~~899,50 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI7112DN-T 6
SI7112D 7
SI7112 8
SI711 51
SI71 214
SI7 1547

SI7112DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes