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TH58NYG4S0FBAID

TH58NYG4S0FBAID
Mfr. #:
TH58NYG4S0FBAID
Fabricante:
Toshiba Memory Corporation
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TH58NYG4S0FBAID Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
TH58NY, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
TH58NYG3S0HBAI4
DISTI # V36:1790_21592784		Toshiba Memory CorporationNAND Flash Parallel 1.8V 8G-bit 1G x 8 63-Pin FBGA0
  • 210000:$5.2720
  • 105000:$5.2780
  • 21000:$6.2160
  • 2100:$8.2400
  • 210:$8.6000
TH58NYG3S0HBAI4
DISTI # TH58NYG3S0HBAI4-ND		Toshiba Memory America, Inc.8GB SLC NAND 24NM BGA 9X11 3.3V
Min Qty: 1
Container: Tray		210In Stock
  • 1050:$6.1661
  • 630:$6.3899
  • 420:$6.7188
  • 210:$6.9289
  • 50:$7.7236
  • 25:$7.7512
  • 10:$7.9150
  • 1:$8.6000
TH58NYG3S0HBAI4
DISTI # TH58NYG3S0HBAI4		Toshiba Memory8G(4G x 2)bit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TH58NYG3S0HBAI4)
RoHS: Compliant
Min Qty: 210
Container: Tray		Americas - 0
  • 2100:$6.3044
  • 1260:$6.4925
  • 840:$6.5909
  • 420:$6.6923
  • 210:$6.7969
TH58NYG3S0HBAI4
DISTI # 757-TH58NYG3S0HBAI4		ToshibaNAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant		191
  • 1:$8.6000
  • 10:$7.9200
  • 25:$7.7500
  • 50:$7.7200
  • 100:$6.9300
  • 250:$6.7200
  • 500:$6.3900
  • 1000:$6.1700
TH58NYG3S0HBAI4_TRAY
DISTI # XSKDRABV0028644		TOSHIBA 
RoHS: Compliant		630 in Stock0 on Order
  • 630:$8.2000
  • 210:$8.7900
Imagen Parte # Descripción
TH58NYG2S3HBAI4

Mfr.#: TH58NYG2S3HBAI4

OMO.#: OMO-TH58NYG2S3HBAI4

 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TH58NYG3S0HBAI6

Mfr.#: TH58NYG3S0HBAI6

OMO.#: OMO-TH58NYG3S0HBAI6

 NAND Flash 1.95V 8Gb 24nm SLC NAND (EEPROM)
TH58NYG2S3HBAI6

Mfr.#: TH58NYG2S3HBAI6

OMO.#: OMO-TH58NYG2S3HBAI6

 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TH58NYG2S3HBAI4

Mfr.#: TH58NYG2S3HBAI4

OMO.#: OMO-TH58NYG2S3HBAI4-TOSHIBA-MEMORY-AMERICA

 Flash Memory 4Gb 1.8V IC Flash NAND EEPROM
TH58NYG3S0HBAI4

Mfr.#: TH58NYG3S0HBAI4

OMO.#: OMO-TH58NYG3S0HBAI4-TOSHIBA-MEMORY-AMERICA

 8GB SLC NAND 24NM BGA 9X11 3.3V
TH58NYG4S0FBAID

Mfr.#: TH58NYG4S0FBAID

OMO.#: OMO-TH58NYG4S0FBAID-1190

 Nuevo y original
TH58NYG4S5FBAID

Mfr.#: TH58NYG4S5FBAID

OMO.#: OMO-TH58NYG4S5FBAID-1190

 Nuevo y original
TH58NYG2S3HBAI4-ND

Mfr.#: TH58NYG2S3HBAI4-ND

OMO.#: OMO-TH58NYG2S3HBAI4-ND-1190

 Nuevo y original
TH58NYG3S0HBAI6

Mfr.#: TH58NYG3S0HBAI6

OMO.#: OMO-TH58NYG3S0HBAI6-TOSHIBA-MEMORY-AMERICA

 NAND Flash Serial 1.8V 8G-bit 1G x 8 67-Pin VFBGA
TH58NYG3S0HBAI6-ND

Mfr.#: TH58NYG3S0HBAI6-ND

OMO.#: OMO-TH58NYG3S0HBAI6-ND-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de TH58NYG4S0FBAID es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
0,00 US$
1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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