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SCT20N120

SCT20N120
Mfr. #:
SCT20N120
Fabricante:
STMicroelectronics
Descripción:
MOSFET 1200V silicon carbide MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCT20N120 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SCT20N120 DatasheetSCT20N120 Datasheet (P4-P6)SCT20N120 Datasheet (P7-P9)SCT20N120 Datasheet (P10-P12)SCT20N120 Datasheet (P13)
ECAD Model:
Más información:
SCT20N120 más información SCT20N120 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
HiP-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
20 A
Rds On - Resistencia de la fuente de drenaje:
239 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
45 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 200 C
Pd - Disipación de energía:
175 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiP247â?¢
Embalaje:
Tubo
Serie:
SCT20N120
Tipo de transistor:
1 N-Channel Power MOSFET
Marca:
STMicroelectronics
Otoño:
17 ns
Tipo de producto:
MOSFET
Hora de levantarse:
16 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
27 ns
Tiempo típico de retardo de encendido:
10 ns
Unidad de peso:
1.340411 oz
Tags
SCT20N, SCT20, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
***ure Electronics
N-Channel 1200 V 290 mO 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™
***ark
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.169Ohm; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
Parte # Mfg. Descripción Valores Precio
SCT20N120
DISTI # V99:2348_17630046		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 20A 3-Pin HIP-247 Tube
RoHS: Compliant		0
    SCT20N120
    DISTI # V36:1790_06556383    		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 20A 3-Pin HIP-247 Tube
    RoHS: Compliant    		0
    • 600000:$7.6230
    • 300000:$7.6310
    • 60000:$9.1290
    • 6000:$12.5800
    • 600:$13.2100
    SCT20N120
    DISTI # 497-15170-ND    		STMicroelectronicsMOSFET N-CH 1200V 20A HIP247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 510:$9.5765
    • 120:$10.7653
    • 30:$12.2183
    • 10:$12.7470
    • 1:$13.8700
    SCT20N120
    DISTI # SCT20N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 20A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT20N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$7.9900
    • 3000:$8.1900
    • 1800:$8.4900
    • 1200:$8.8900
    • 600:$9.3900
    SCT20N120
    DISTI # SCT20N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 20A 3-Pin HiP247 Tube (Alt: SCT20N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Asia - 0
    • 30000:$8.2763
    • 15000:$8.5000
    • 6000:$8.7361
    • 3000:$9.1159
    • 1800:$9.5303
    • 1200:$9.9841
    • 600:$10.4833
    SCT20N120
    DISTI # SCT20N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 20A 3-Pin HiP247 Tube (Alt: SCT20N120)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€10.8900
    • 500:€11.6900
    • 100:€12.0900
    • 50:€12.5900
    • 25:€13.0900
    • 10:€13.5900
    • 1:€14.8900
    SCT20N120
    DISTI # 45AC7496    		STMicroelectronicsTrans MOSFET N-CH 1200V 20A 3-Pin HiP247 Tube - Bulk (Alt: 45AC7496)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 500:$13.1100
    • 250:$13.3000
    • 100:$13.7700
    • 50:$14.2000
    • 25:$14.8500
    • 10:$15.2600
    • 1:$15.8800
    SCT20N120H
    DISTI # SCT20N120H    		STMicroelectronicsTransistor MOSFET N-CH 1200V 20A 3-Pin HIP-247 Tube (Alt: SCT20N120H)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€8.3900
    • 500:€8.4900
    • 100:€8.5900
    • 50:€8.6900
    • 25:€8.8900
    • 10:€9.3900
    • 1:€10.1900
    SCT20N120H
    DISTI # SCT20N120H    		STMicroelectronicsTransistor MOSFET N-CH 1200V 20A 3-Pin HIP-247 Tube - Tape and Reel (Alt: SCT20N120H)
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$7.9900
    • 6000:$8.1900
    • 4000:$8.4900
    • 2000:$8.8900
    • 1000:$9.3900
    SCT20N120AG
    DISTI # SCT20N120AG    		STMicroelectronicsTransistor MOSFET N-CH 1200V 20A 3-Pin HIP-247 Tube (Alt: SCT20N120AG)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
      SCT20N120
      DISTI # 45AC7496      		STMicroelectronicsMOSFET, N-CH, 1.2KV, 20A, HIP247,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.169ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3.5V,MSL:- RoHS Compliant: Yes0
      • 500:$12.5700
      • 250:$12.7500
      • 100:$13.2000
      • 50:$13.6100
      • 25:$14.2300
      • 10:$14.6200
      • 1:$15.2200
      SCT20N120H
      DISTI # 02AH6931      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$7.8700
      SCT20N120
      DISTI # 511-SCT20N120      		STMicroelectronicsMOSFET 1200V silicon carbide MOSFET
      RoHS: Compliant      		0
      • 1:$13.2100
      • 10:$12.1500
      • 25:$11.6400
      • 100:$10.2600
      • 250:$9.7500
      • 500:$9.1200
      SCT20N120H
      DISTI # 511-SCT20N120H      		STMicroelectronicsMOSFET0
      • 1000:$8.3600
      SCT20N120
      DISTI # TMOSP11518      		STMicroelectronicsSiC-N 1200V 20A 239mOhm HiP247
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 600:$13.8000
      SCT20N120
      DISTI # 2807234      		STMicroelectronicsMOSFET, N-CH, 1.2KV, 20A, HIP2470
      • 100:£9.4900
      • 50:£9.7800
      • 10:£10.0900
      • 5:£10.3800
      • 1:£10.8900
      Imagen Parte # Descripción
      1EDI20N12AF

      Mfr.#: 1EDI20N12AF

      OMO.#: OMO-1EDI20N12AF

      		 Gate Drivers DRIVER IC
      SCT10N120

      Mfr.#: SCT10N120

      OMO.#: OMO-SCT10N120

      		 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
      SCT3120ALGC11

      Mfr.#: SCT3120ALGC11

      OMO.#: OMO-SCT3120ALGC11

      		 MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
      LSIC1MO120E0160

      Mfr.#: LSIC1MO120E0160

      OMO.#: OMO-LSIC1MO120E0160

      		 MOSFET 1200 V 160 mOhm SiC Mosfet
      C2M0160120D

      Mfr.#: C2M0160120D

      OMO.#: OMO-C2M0160120D

      		 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
      STW28N65M2

      Mfr.#: STW28N65M2

      OMO.#: OMO-STW28N65M2

      		 MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
      SCT2160KEC

      Mfr.#: SCT2160KEC

      OMO.#: OMO-SCT2160KEC

      		 MOSFET 1200V20A160mOhm Silicon Carbide SiC
      CRCW06033K30FKEAC

      Mfr.#: CRCW06033K30FKEAC

      OMO.#: OMO-CRCW06033K30FKEAC

      		 Thick Film Resistors - SMD 1/10Watt 3.3Kohms 1% Commercial Use
      LSIC1MO120E0080

      Mfr.#: LSIC1MO120E0080

      OMO.#: OMO-LSIC1MO120E0080

      		 MOSFET 1200V 80mOhm SiC MOSFET
      1EDI20N12AF

      Mfr.#: 1EDI20N12AF

      OMO.#: OMO-1EDI20N12AF-91

      		 Gate Drivers DRIVER IC
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de SCT20N120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      13,21 US$
      13,21 US$
      10
      12,15 US$
      121,50 US$
      25
      11,64 US$
      291,00 US$
      100
      10,26 US$
      1 026,00 US$
      250
      9,75 US$
      2 437,50 US$
      500
      9,12 US$
      4 560,00 US$
      1000
      8,37 US$
      8 370,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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