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STW28N65M2

STW28N65M2
Mfr. #:
STW28N65M2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW28N65M2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STW28N65M2 más información STW28N65M2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
20 A
Rds On - Resistencia de la fuente de drenaje:
180 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
35 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
170 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Serie:
STW28N65M2
Tipo de transistor:
1 N-Channel Power MOSFET
Marca:
STMicroelectronics
Otoño:
8.8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
59 ns
Tiempo típico de retardo de encendido:
13.4 ns
Unidad de peso:
1.340411 oz
Tags
STW28N6, STW28, STW2, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
N-Channel 650 V 0.18 Ohm Flange Mount MDmesh M2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 650V, 20A, 170W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***roFlash
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS¬ô Power Mosfet - TO-247-3
***ment14 APAC
MOSFET, N-CH, 650V, 22.4A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Source Voltage Vds:650V; On Resistance
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.125 Ohm 45.5 nC 190 W Flange Mount Mosfet - TO-247-3
***ark
MOSFET, N-CH, 600V, 26A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
STW24N60M2 Series 650 V 0.19 Ohm 18 A N-Ch. MDmesh II Plus™ Low Qg Power Mosfet
***ark
MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ure Electronics
Single N-Channel 600 V 160 mOhm 44 nC CoolMOS™ Power Mosfet - TO-247-3
***et
Transistor MOSFET N-Channel 600V 23.8A 3-Pin TO-247 Tube
***nell
MOSFET, N-CH, 600V, 23.8A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 23.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.144ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
*** Stop Electro
Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
***ark
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ure Electronics
N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-247
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Parte # Mfg. Descripción Valores Precio
STW28N65M2
DISTI # 32894267		STMicroelectronicsTrans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		600
  • 600:$1.4336
STW28N65M2
DISTI # 497-15575-5-ND		STMicroelectronicsMOSFET N-CH 650V 20A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		973In Stock
  • 5010:$1.4058
  • 2520:$1.4607
  • 510:$1.8232
  • 120:$2.1417
  • 30:$2.4713
  • 10:$2.6140
  • 1:$2.9100
STW28N65M2
DISTI # V36:1790_13796950		STMicroelectronicsTrans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 600000:$1.2180
  • 300000:$1.2210
  • 60000:$1.4080
  • 6000:$1.7270
  • 600:$1.7800
STW28N65M2
DISTI # STW28N65M2		STMicroelectronicsTrans MOSFET N-CH 650V 20A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW28N65M2)
RoHS: Not Compliant
Min Qty: 600
Container: Tube		Americas - 372
  • 6000:$1.3359
  • 3000:$1.3638
  • 1800:$1.4270
  • 1200:$1.4943
  • 600:$1.5682
STW28N65M2
DISTI # STW28N65M2		STMicroelectronicsTrans MOSFET N-CH 650V 20A 3-Pin TO-247 Tube (Alt: STW28N65M2)
RoHS: Compliant
Min Qty: 30
Container: Tube		Europe - 0
  • 300:€1.1900
  • 180:€1.2900
  • 120:€1.3900
  • 60:€1.4900
  • 30:€1.8900
STW28N65M2
DISTI # 56Y1117		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$1.3600
  • 250:$1.4100
  • 100:$1.6800
  • 50:$1.9400
  • 25:$2.0600
  • 10:$2.3600
  • 1:$2.7200
STW28N65M2.
DISTI # 24AC0055		STMicroelectronicsPTD HIGH VOLTAGE372
  • 6000:$1.3400
  • 3000:$1.3700
  • 1800:$1.4300
  • 1200:$1.5000
  • 1:$1.5700
STW28N65M2
DISTI # 511-STW28N65M2		STMicroelectronicsMOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
RoHS: Compliant		6532
  • 1:$2.7600
  • 10:$2.3500
  • 100:$2.0400
  • 250:$1.9300
  • 500:$1.7300
  • 1000:$1.4600
  • 2500:$1.3900
  • 5000:$1.3300
STW28N65M2
DISTI # 3129973		STMicroelectronicsMOSFET, N-CH, 650V, 20A, 170W, TO-247
RoHS: Compliant		0
  • 1000:$1.8700
  • 500:$2.1400
  • 250:$2.3200
  • 100:$2.4400
  • 10:$2.8400
  • 1:$3.6100
STW28N65M2
DISTI # 3129973		STMicroelectronicsMOSFET, N-CH, 650V, 20A, 170W, TO-247588
  • 500:£1.2900
  • 250:£1.4400
  • 100:£1.5300
  • 10:£1.7600
  • 1:£2.3300
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de STW28N65M2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,76 US$
2,76 US$
10
2,35 US$
23,50 US$
100
2,04 US$
204,00 US$
250
1,93 US$
482,50 US$
500
1,73 US$
865,00 US$
1000
1,46 US$
1 460,00 US$
2500
1,39 US$
3 475,00 US$
5000
1,33 US$
6 650,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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