QPD1013SR

QPD1013SR
Mfr. #:
QPD1013SR
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
QPD1013SR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
QPD1013SR más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
21.8 dB
Polaridad del transistor:
Canal N
Id - Corriente de drenaje continua:
1.7 A
Potencia de salida:
178 W
Voltaje máximo de la puerta de drenaje:
65 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Pd - Disipación de energía:
67 W
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DFN-6
Embalaje:
Carrete
Solicitud:
Radar militar, Jammers, Instrumentación de prueba, Amplificadores de banda ancha o banda estrecha, Móvil terrestre y Milit
Configuración:
Desagüe triple simple
Frecuencia de operación:
1.2 GHz to 2.7 GHz
Marca:
Qorvo
Kit de desarrollo:
QPD1013EVB01
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
100
Subcategoría:
Transistores
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
GaN RF Transistor 2.7GHz 65V 150W 6-Pin QFN T/R
***el Electronic
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1013 GaN RF Transistor
Qorvo QPD1013 GaN RF Transistor is a high power and wide bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
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QPD1015L

Mfr.#: QPD1015L

OMO.#: OMO-QPD1015L-1152

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Mfr.#: QPD1009

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Disponibilidad
Valores:
Available
En orden:
1993
Ingrese la cantidad:
El precio actual de QPD1013SR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
176,00 US$
176,00 US$
25
152,22 US$
3 805,50 US$
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