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| PartNumber | HGTG18N120BND | HGTG18N120BND,18N120BND | HGTG18N120BND,18N120BND, |
| Description | IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.45 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 54 A | - | - |
| Pd Power Dissipation | 390 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTG18N120BND | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 54 A | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 4.82 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 54 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTG18N120BND_NL | - | - |
| Unit Weight | 0.225401 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTG18N120BND | IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde | |
ON Semiconductor |
HGTG18N120BND | IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde | |
| HGTG18N120BND,18N120BND | Nuevo y original | ||
| HGTG18N120BND,18N120BND, | Nuevo y original | ||
| HGTG18N120BND,18N120BND,18N120, | Nuevo y original | ||
| HGTG18N120BND-NL | Nuevo y original |