CGH40180PP

CGH40180PP
Mfr. #:
CGH40180PP
Fabricante:
N/A
Descripción:
RF JFET Transistors DC-2.5GHz 28V 180W Gain 19dB GaN HEMT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGH40180PP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CGH40180PP más información
Atributo del producto
Valor de atributo
Fabricante
Cree
categoria de producto
Chips de IC
embalaje
Tubo
Estilo de montaje
Tornillo
Rango de temperatura de funcionamiento
-
Paquete-Estuche
440199
Tecnología
GaN SiC
Configuración
Doble
Tipo transistor
HEMT
Ganar
19 dB
Clase
-
Potencia de salida
220 W
Disipación de potencia Pd
-
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Solicitud
-
Frecuencia de operación
1 GHz to 2.5 GHz
Id-corriente-de-drenaje-continua
24 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Resistencia a la fuente de desagüe de Rds
-
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
-
Kit de desarrollo
CGH40180PP-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Tensión de corte de fuente de puerta
-
Voltaje de puerta de drenaje máximo
-
Figura de ruido NF
-
P1dB-Punto de compresión
-
Tags
CGH40180PP, CGH4018, CGH401, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440199
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Parte # Mfg. Descripción Valores Precio
CGH40180PP
DISTI # CGH40180PP-ND
WolfspeedRF MOSFET HEMT 28V 440199
RoHS: Compliant
Min Qty: 1
Container: Tray
222In Stock
  • 1:$431.0700
CGH40180PP-TB
DISTI # CGH40180PP-TB-ND
WolfspeedBOARD DEMO AMP CIRCUIT CGH40180
RoHS: Compliant
Min Qty: 1
Container: Bulk
Temporarily Out of Stock
  • 1:$550.0000
CGH40180PP
DISTI # 941-CGH40180PP
Cree, Inc.RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
RoHS: Compliant
55
  • 1:$431.0700
CGH40180PP-TB
DISTI # 941-CGH40180PP-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
3
  • 1:$550.0000
CGH40180PP
DISTI # CGH40180PP
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
100
  • 1:$431.0700
CGH40180PP-TB
DISTI # CGH40180PP-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
2
  • 2:$550.0000
Imagen Parte # Descripción
CGH40006P

Mfr.#: CGH40006P

OMO.#: OMO-CGH40006P

RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
CGH40180PP

Mfr.#: CGH40180PP

OMO.#: OMO-CGH40180PP

RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
CGH40120P

Mfr.#: CGH40120P

OMO.#: OMO-CGH40120P

RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
CGH40025

Mfr.#: CGH40025

OMO.#: OMO-CGH40025-1190

Nuevo y original
CGH40120F-TB

Mfr.#: CGH40120F-TB

OMO.#: OMO-CGH40120F-TB-WOLFSPEED

BOARD DEMO AMP CIRCUIT CGH40120
CGH40180PP/F 4G 180-220

Mfr.#: CGH40180PP/F 4G 180-220

OMO.#: OMO-CGH40180PP-F-4G-180-220-1190

Nuevo y original
CGH40006S

Mfr.#: CGH40006S

OMO.#: OMO-CGH40006S-WOLFSPEED

RF JFET Transistors DC-6GHz 28V 6W Gain 11.8dB GaN HEMT
CGH40035F

Mfr.#: CGH40035F

OMO.#: OMO-CGH40035F-WOLFSPEED

RF JFET Transistors DC-6GHz 28V 35W Gain 14dB GaN HEMT
CGH40120F

Mfr.#: CGH40120F

OMO.#: OMO-CGH40120F-WOLFSPEED

RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
CGH40045F

Mfr.#: CGH40045F

OMO.#: OMO-CGH40045F-WOLFSPEED

RF JFET Transistors DC-4GHz 28V 45W Gain 14dB GaN HEMT
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de CGH40180PP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
646,60 US$
646,60 US$
10
614,27 US$
6 142,75 US$
100
581,94 US$
58 194,45 US$
500
549,61 US$
274 807,15 US$
1000
517,28 US$
517 284,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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