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BSC057N08NS3 G

BSC057N08NS3 G
Mfr. #:
BSC057N08NS3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC057N08NS3 G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
BSC057N08NS3 G más información
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
BSC057N08NS3GATMA1 BSC057N08NS3GXT SP000447542
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
9 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Resistencia a la fuente de desagüe de Rds
5.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
32 ns
Tiempo de retardo de encendido típico
16 ns
Qg-Gate-Charge
56 nC
Transconductancia directa-Mín.
80 S 40 S
Modo de canal
Mejora
Tags
BSC057N08NS3, BSC057N08, BSC057, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9314
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3G
DISTI # BSC057N08NS3 G		Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC057N08NS3GATMA1
    DISTI # BSC057N08NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON EP - Tape and Reel (Alt: BSC057N08NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.7499
    • 10000:$0.7229
    • 20000:$0.6969
    • 30000:$0.6739
    • 50000:$0.6619
    BSC057N08NS3GATMA1
    DISTI # 79X1332    		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$1.9200
    • 10:$1.6300
    • 25:$1.5200
    • 50:$1.4200
    • 100:$1.3100
    • 250:$1.2300
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3 G
    DISTI # 726-BSC057N08NS3G    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$1.9200
    • 10:$1.6300
    • 100:$1.3100
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3GATMA1
    DISTI # 726-BSC057N08NS3GATM    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$1.9200
    • 10:$1.6300
    • 100:$1.3100
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3GInfineon Technologies AGPower Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		Europe - 2495
      BSC057N08NS3GATMA1
      DISTI # 2432707      		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 5:£1.7200
      • 25:£1.5800
      • 100:£1.2600
      BSC057N08NS3GATMA1
      DISTI # 2432707      		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 1:$3.0400
      • 10:$2.5900
      • 100:$2.0700
      BSC057N08NS3GATMA1
      DISTI # 2432707RL      		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 1:$3.0400
      • 10:$2.5900
      • 100:$2.0700
      BSC057N08NS3GInfineon Technologies AG80V,100A,N-channel power MOSFET40
      • 1:$1.2600
      • 100:$1.0500
      • 500:$0.9200
      • 1000:$0.9000
      Imagen Parte # Descripción
      BSC057N03MS G

      Mfr.#: BSC057N03MS G

      OMO.#: OMO-BSC057N03MS-G

      		 MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3M
      BSC057N08NS3GATMA1

      Mfr.#: BSC057N08NS3GATMA1

      OMO.#: OMO-BSC057N08NS3GATMA1

      		 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
      BSC057N03LS

      Mfr.#: BSC057N03LS

      OMO.#: OMO-BSC057N03LS-1190

      		 Nuevo y original
      BSC057N03LS G

      Mfr.#: BSC057N03LS G

      OMO.#: OMO-BSC057N03LS-G-1190

      		 Trans MOSFET N-CH 30V 17A 8-Pin TDSON T/R (Alt: BSC057N03LS G)
      BSC057N03LSGATMA1 , TDA8

      Mfr.#: BSC057N03LSGATMA1 , TDA8

      OMO.#: OMO-BSC057N03LSGATMA1-TDA8-1190

      		 Nuevo y original
      BSC057N03MSGATMA1

      Mfr.#: BSC057N03MSGATMA1

      OMO.#: OMO-BSC057N03MSGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 71A TDSON-8
      BSC057N03MSGATMA1 , TDA8

      Mfr.#: BSC057N03MSGATMA1 , TDA8

      OMO.#: OMO-BSC057N03MSGATMA1-TDA8-1190

      		 Nuevo y original
      BSC057N08NS3 G

      Mfr.#: BSC057N08NS3 G

      OMO.#: OMO-BSC057N08NS3-G-1190

      		 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
      BSC057N08NS3G

      Mfr.#: BSC057N08NS3G

      OMO.#: OMO-BSC057N08NS3G-1190

      		 Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
      BSC057N08NS3G , TDA8035H

      Mfr.#: BSC057N08NS3G , TDA8035H

      OMO.#: OMO-BSC057N08NS3G-TDA8035H-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de BSC057N08NS3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,42 US$
      1,42 US$
      10
      1,35 US$
      13,47 US$
      100
      1,28 US$
      127,58 US$
      500
      1,20 US$
      602,45 US$
      1000
      1,13 US$
      1 134,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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