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| PartNumber | BSC057N08NS3GATMA1 | BSC057N08NS3 G | BSC057N08NS3G , TDA8035H |
| Description | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 5.7 mOhms | 4.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 42 nC | 56 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 114 W | 114 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 40 S | 40 S | - |
| Development Kit | EVAL_1K4W_ZVS_FB_CFD7 | - | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14 ns | 14 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | 32 ns | - |
| Typical Turn On Delay Time | 16 ns | 16 ns | - |
| Part # Aliases | BSC057N08NS3 BSC57N8NS3GXT G SP000447542 | BSC057N08NS3GATMA1 BSC57N8NS3GXT SP000447542 | - |
| Unit Weight | 0.003527 oz | 0.003527 oz | - |
| Type | - | OptiMOS 3 Power-Transistor | - |