IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1
Mfr. #:
IPL65R1K0C6SATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 8TSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPL65R1K0C6SATMA1 Ficha de datos
Entrega:
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ECAD Model:
Más información:
IPL65R1K0C6SATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPL65R1
embalaje
Carrete
Alias ​​de parte
IPL65R1K0C6S SP001163084
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
SON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
34.7 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Otoño
13.6 ns
Hora de levantarse
5.2 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
4.2 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
1 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
41 ns
Tiempo de retardo de encendido típico
6.6 ns
Qg-Gate-Charge
15 nC
Tags
IPL65R1K0, IPL65R1K, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 4.2A 8-Pin Thin-PAK EP T/R
***et
Trans MOSFET N-CH 700V 4.2A 5-Pin TPAK T/R
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPL65R1K0C6SATMA1
DISTI # V72:2272_06384600
Infineon Technologies AGTrans MOSFET N-CH 650V 4.2A 8-Pin Thin-PAK EP T/R
RoHS: Compliant
4980
  • 75000:$0.4515
  • 30000:$0.4574
  • 15000:$0.4634
  • 6000:$0.4693
  • 3000:$0.5289
  • 1000:$0.5345
  • 500:$0.6690
  • 250:$0.7557
  • 100:$0.7639
  • 50:$0.9727
  • 25:$0.9838
  • 10:$0.9950
  • 1:$1.1463
IPL65R1K0C6SATMA1
DISTI # IPL65R1K0C6SATMA1-ND
Infineon Technologies AGMOSFET N-CH 8TSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.5744
IPL65R1K0C6SATMA1
DISTI # 28976078
Infineon Technologies AGTrans MOSFET N-CH 650V 4.2A 8-Pin Thin-PAK EP T/R
RoHS: Compliant
4980
  • 15000:$0.4982
  • 6000:$0.5045
  • 3000:$0.5686
  • 1000:$0.5746
  • 500:$0.7192
  • 250:$0.8124
  • 100:$0.8212
  • 50:$1.0457
  • 25:$1.0576
  • 13:$1.0696
IPL65R1K0C6SATMA1
DISTI # IPL65R1K0C6SATMA1
Infineon Technologies AGTrans MOSFET N-CH 700V 4.2A 5-Pin TPAK T/R - Tape and Reel (Alt: IPL65R1K0C6SATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5649
  • 10000:$0.5449
  • 20000:$0.5249
  • 30000:$0.5069
  • 50000:$0.4979
IPL65R1K0C6SATMA1
DISTI # SP001163084
Infineon Technologies AGTrans MOSFET N-CH 700V 4.2A 5-Pin TPAK T/R (Alt: SP001163084)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€0.7259
  • 10000:€0.5939
  • 20000:€0.5439
  • 30000:€0.5019
  • 50000:€0.4669
IPL65R1K0C6SATMA1
DISTI # 726-IPL65R1K0C6SATMA
Infineon Technologies AGMOSFET N-Ch 650V 4.2A ThinPAK 5x6
RoHS: Compliant
4565
  • 1:$1.2800
  • 10:$1.1000
  • 100:$0.8450
  • 500:$0.7460
  • 1000:$0.5890
  • 5000:$0.5230
  • 10000:$0.5030
Imagen Parte # Descripción
IPL65R1K5C6SATMA1

Mfr.#: IPL65R1K5C6SATMA1

OMO.#: OMO-IPL65R1K5C6SATMA1

MOSFET N-Ch 650V 3A ThinPAK 5x6
IPL65R1K0C6SATMA1

Mfr.#: IPL65R1K0C6SATMA1

OMO.#: OMO-IPL65R1K0C6SATMA1

MOSFET N-Ch 650V 4.2A ThinPAK 5x6
IPL65R1K0C6SATMA1

Mfr.#: IPL65R1K0C6SATMA1

OMO.#: OMO-IPL65R1K0C6SATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 8TSON
IPL65R1K0C6

Mfr.#: IPL65R1K0C6

OMO.#: OMO-IPL65R1K0C6-1190

Nuevo y original
IPL65R1K0C6S

Mfr.#: IPL65R1K0C6S

OMO.#: OMO-IPL65R1K0C6S-1190

Nuevo y original
IPL65R1K5C6SATMA1

Mfr.#: IPL65R1K5C6SATMA1

OMO.#: OMO-IPL65R1K5C6SATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 8TSON
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de IPL65R1K0C6SATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,68 US$
0,68 US$
10
0,64 US$
6,43 US$
100
0,61 US$
60,95 US$
500
0,58 US$
287,85 US$
1000
0,54 US$
541,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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