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IPL65R1K5C6SATMA1

IPL65R1K5C6SATMA1
Mfr. #:
IPL65R1K5C6SATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 650V 3A ThinPAK 5x6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPL65R1K5C6SATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPL65R1K5C6SATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
ThinPAK-56-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
3 A
Rds On - Resistencia de la fuente de drenaje:
1.5 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
11 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
26.6 W
Configuración:
Único
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
6 mm
Serie:
CoolMOS C6
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Infineon Technologies
Otoño:
18.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5.9 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
33 ns
Tiempo típico de retardo de encendido:
7.7 ns
Parte # Alias:
IPL65R1K5C6S SP001163086
Unidad de peso:
0.002677 oz
Tags
IPL65R1K, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
***ineon SCT
The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs, PG-TSON-8, RoHS
***et
MOS Power Transistors HV (>= 200V)
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
*** Electronics
Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 500 V 1.4 Ohm 8.2 nC OptiMOS™ Power Mosfet - DPAK
*** Stop Electro
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 500V, 3.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***ical
Trans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R
***ark
Mosfet, N-Ch, 600V, 3A, Smd; Transistor Polarity:n Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.35Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK
***ure Electronics
N-Channel 600 V 3.9 A 1.2 Ohm Surface Mount SuperFET® Mosfet - TO-252-3
***ment14 APAC
MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:3.9A; On State Resistance Max:1.2ohm; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:11.7A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
***ure Electronics
N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***et Europe
Trans MOSFET N-CH 700V 3.9A 3-Pin TO-252 T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 700V VDS, 30±V VGS,
*** Stop Electro
Power Field-Effect Transistor, 3.9A I(D), 700V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPL65R1K5C6SATMA1
DISTI # V72:2272_06384406		Infineon Technologies AGTrans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
RoHS: Compliant		0
    IPL65R1K5C6SATMA1
    DISTI # V36:1790_06384406    		Infineon Technologies AGTrans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
    RoHS: Compliant    		0
    • 5000000:$0.4071
    • 2500000:$0.4074
    • 500000:$0.4279
    • 50000:$0.4632
    • 5000:$0.4691
    IPL65R1K5C6SATMA1
    DISTI # IPL65R1K5C6SATMA1-ND    		Infineon Technologies AGMOSFET N-CH 8TSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$0.4691
    IPL65R1K5C6SATMA1
    DISTI # IPL65R1K5C6SATMA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL65R1K5C6SATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.4259
    • 30000:$0.4339
    • 20000:$0.4489
    • 10000:$0.4659
    • 5000:$0.4839
    IPL65R1K5C6SATMA1
    DISTI # SP001163086    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001163086)
    RoHS: Compliant
    Min Qty: 5000    		Europe - 0
    • 50000:€0.3989
    • 30000:€0.4299
    • 20000:€0.4659
    • 10000:€0.5079
    • 5000:€0.6209
    IPL65R1K5C6SATMA1
    DISTI # 726-IPL65R1K5C6SATMA    		Infineon Technologies AGMOSFET N-Ch 650V 3A ThinPAK 5x6
    RoHS: Compliant    		5113
    • 1:$1.1000
    • 10:$0.9410
    • 100:$0.7230
    • 500:$0.6390
    • 1000:$0.5040
    • 5000:$0.4470
    • 10000:$0.4300
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    IPL65R1K0C6SATMA1

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    OMO.#: OMO-IPL65R1K0C6SATMA1

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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de IPL65R1K5C6SATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,10 US$
    1,10 US$
    10
    0,94 US$
    9,41 US$
    100
    0,72 US$
    72,30 US$
    500
    0,64 US$
    319,50 US$
    1000
    0,50 US$
    504,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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