IXTY1N120P

IXTY1N120P
Mfr. #:
IXTY1N120P
Fabricante:
IXYS
Descripción:
MOSFET N-CH 1200V 1A TO-252
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTY1N120P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IXTY1N1, IXTY1N, IXTY1, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 1200V 1A TO-252
***et
TRANS MOSFET N-CH 500V 1.1A 3PIN DPAK
***ser
MOSFETs 500V N-Channel QFET
***et
Transistor MOSFET N-Channel 900V 5.1A 3-Pin TO-252
*** Stop Electro
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
***icroelectronics
N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package
***r Electronics
Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
FPGA Cyclone® III Family 15408 Cells 437.5MHz 65nm Technology 1.2V Automotive 256-Pin UFBGA
***nell
MOSFET, N-CH, 1.05KV, 1.5A, 60W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 1.05kV; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 950 V, 2 Ohm typ., 3.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
***ure Electronics
Single N-Channel 950 V 2.5 Ohm 70 W Surface Mount Power Mosfet - DPAK-3
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 950V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***icroelectronics
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
***ical
Trans MOSFET N-CH 950V 2A 3-Pin(2+Tab) DPAK T/R
*** Electronic Components
MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected
***enic
950V 2A 45W 5´Î@10V1A 5V@100Ã×A N Channel TO-252-3 MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 2A I(D), 950V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N-CH, 950V, 2A, 150DEG C, 45W;
***ical
Trans MOSFET N-CH 600V 0.9A 3-Pin(2+Tab) DPAK T/R
***et
N-CH/600V/0.9A/12OHM/SUBSTITUTE OF SSR1N60ATM
***r Electronics
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Parte # Mfg. Descripción Valores Precio
IXTY1N120P
DISTI # IXTY1N120P-ND
IXYS CorporationMOSFET N-CH 1200V 1A TO-252
RoHS: Compliant
Min Qty: 140
Container: Tube
Temporarily Out of Stock
  • 140:$1.9125
Imagen Parte # Descripción
IXTY1R4N120P-TRL

Mfr.#: IXTY1R4N120P-TRL

OMO.#: OMO-IXTY1R4N120P-TRL

Discrete Semiconductor Modules Polar Power MOSFET
IXTY1R6N100D2

Mfr.#: IXTY1R6N100D2

OMO.#: OMO-IXTY1R6N100D2

MOSFET N-CH MOSFETS (D2) 1000V 1.6A
IXTY12N06T

Mfr.#: IXTY12N06T

OMO.#: OMO-IXTY12N06T

MOSFET 12 Amps 6V
IXTY1R6N50D2TRL

Mfr.#: IXTY1R6N50D2TRL

OMO.#: OMO-IXTY1R6N50D2TRL-1190

Nuevo y original
IXTY1N120P

Mfr.#: IXTY1N120P

OMO.#: OMO-IXTY1N120P-IXYS-CORPORATION

MOSFET N-CH 1200V 1A TO-252
IXTY1R4N120PHV

Mfr.#: IXTY1R4N120PHV

OMO.#: OMO-IXTY1R4N120PHV-IXYS-CORPORATION

MOSFET N-CH
IXTY18P10T TRL

Mfr.#: IXTY18P10T TRL

OMO.#: OMO-IXTY18P10T-TRL-1190

IXTY18P10T TRL
IXTY18P10T

Mfr.#: IXTY18P10T

OMO.#: OMO-IXTY18P10T-IXYS-CORPORATION

IGBT Transistors MOSFET -100V -18A
IXTY1N100P

Mfr.#: IXTY1N100P

OMO.#: OMO-IXTY1N100P-IXYS-CORPORATION

MOSFET 1 Amps 1000V 14 Rds
IXTY15N20T

Mfr.#: IXTY15N20T

OMO.#: OMO-IXTY15N20T-IXYS-CORPORATION

MOSFET 15 Amps 200V 180 Rds
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de IXTY1N120P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,87 US$
2,87 US$
10
2,73 US$
27,25 US$
100
2,58 US$
258,19 US$
500
2,44 US$
1 219,20 US$
1000
2,30 US$
2 295,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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