PartNumber | IXTY1N100P-TRL | IXTY1N120P | IXTY1N100P |
Description | Discrete Semiconductor Modules Polar Power MOSFET | MOSFET N-CH 1200V 1A TO-252 | MOSFET 1 Amps 1000V 14 Rds |
Manufacturer | IXYS | - | IXYS |
Product Category | Discrete Semiconductor Modules | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Product | Power MOSFET Modules | - | - |
Type | Polar | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Packaging | Reel | - | Tube |
Configuration | Single | - | Single |
Brand | IXYS | - | - |
Transistor Polarity | N-Channel | - | N-Channel |
Fall Time | 24 ns | - | 24 ns |
Id Continuous Drain Current | 1 A | - | - |
Pd Power Dissipation | 50 W | - | - |
Product Type | Discrete Semiconductor Modules | - | - |
Rds On Drain Source Resistance | 15 Ohms | - | - |
Rise Time | 26 ns | - | 26 ns |
Factory Pack Quantity | 2500 | - | - |
Subcategory | Discrete Semiconductor Modules | - | - |
Tradename | Polar | - | - |
Typical Turn Off Delay Time | 55 ns | - | 55 ns |
Typical Turn On Delay Time | 20 ns | - | 20 ns |
Vds Drain Source Breakdown Voltage | 1000 V | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Series | - | - | IXTY1N100 |
Unit Weight | - | - | 0.012346 oz |
Package Case | - | - | TO-252-3 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 50 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 1 A |
Vds Drain Source Breakdown Voltage | - | - | 1000 V |
Rds On Drain Source Resistance | - | - | 15 Ohms |
Channel Mode | - | - | Enhancement |