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IXTY3N60P

IXTY3N60P
Mfr. #:
IXTY3N60P
Fabricante:
IXYS
Descripción:
Darlington Transistors MOSFET 3 Amps 600V 3 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTY3N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXTY3N60
embalaje
Tubo
Unidad de peso
0.012346 oz
Estilo de montaje
SMD / SMT
Nombre comercial
PolarHV
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
70 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
22 ns
Hora de levantarse
25 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
3 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5.5 V
Resistencia a la fuente de desagüe de Rds
2.9 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
58 ns
Tiempo de retardo de encendido típico
25 ns
Qg-Gate-Charge
9.8 nC
Transconductancia directa-Mín.
2.2 S
Modo de canal
Mejora
Tags
IXTY3, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 2.9 Ohm 70 W Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 600V 3A 3-Pin(2+Tab) DPAK
***nell
MOSFET, N, D-PAK; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:3A; Resistance, Rds On:2.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:DPAK; Termination Type:SMD; Capacitance, Ciss Typ:411pF; Charge, Gate N-channel:9.8nC; Pins, No. of:3; Power, Pd:70W; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:600V; Time, trr Max:500ns
***et
Trans MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R
***ical
600V N-CHANNEL ENHANCEMENT MODE MOSFET
***i-Key
MOSFET BVDSS: 501V 650V TO252 T&
***ineon SCT
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***Yang
Transistor MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R - Tape and Reel
***ark
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 2.3A 3-Pin TO-252 T/R
***ronik
N-CH 600V 2,3A 2100mOhm TO252
***emi
N-Channel QFET® MOSFET 600V, 2.8A, 2.5Ω
***nsix Microsemi
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ical
MOSFET 600V, NCH MOSFET
***i-Key
MOSFET N-CH 600V 2.8A DPAK
***el Electronic
IC SUPERVISOR 1 CHANNEL 5SSOP
***ure Electronics
Single N-Channel 500 V 2.2 Ohm 135 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
***ineon SCT
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***icroelectronics
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
***ure Electronics
N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Parte # Mfg. Descripción Valores Precio
IXTY3N60P
DISTI # IXTY3N60P-ND		IXYS CorporationMOSFET N-CH 600V 3A D-PAK
RoHS: Compliant
Min Qty: 70
Container: Tube		Limited Supply - Call
  • 70:$1.2936
IXTY3N60P
DISTI # 747-IXTY3N60P		IXYS CorporationMOSFET 3 Amps 600V 3 Rds
RoHS: Compliant		2970
  • 1:$1.5000
  • 10:$1.3500
  • 25:$1.1800
  • 50:$1.1000
  • 100:$1.0900
  • 250:$0.8820
  • 500:$0.8460
  • 1000:$0.7010
  • 2500:$0.5880
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Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXTY3N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,88 US$
0,88 US$
10
0,84 US$
8,38 US$
100
0,79 US$
79,38 US$
500
0,75 US$
374,85 US$
1000
0,71 US$
705,60 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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