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FDMS3600AS

FDMS3600AS
Mfr. #:
FDMS3600AS
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET DUAL N-CH. ER TRENCH MO
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMS3600AS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-56-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Configuración:
Doble
Nombre comercial:
Power Stage PowerTrench SyncFet
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
6 mm
Serie:
FDMS3600AS
Tipo de transistor:
2 N-Channel
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.003175 oz
Tags
FDMS3600, FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
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***el Electronic
RICHTEK RT9711AGBGPower Load Switch, High Side, Active High, 1 Output, 5.5V, 2.5A, SOT-23-5
***emi
PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET
***ure Electronics
Dual N-Channel 25 V 8.5/2.4 mOhm 27/82 nC 2.2/2.5 W Mosfet - POWER 56-8
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
***(Formerly Allied Electronics)
SIS430DN-T1-GE3 N-channel MOSFET Transistor; 21 A; 25 V; 8-Pin PowePAK 1212
***et
Trans MOSFET N-CH 25V 21.5A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 25V 35A PPAK 1212-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***Yang
Transistor MOSFET Array Dual N-Channel 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V
***ical
Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 EP T/R
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***et
Transistor MOSFET N-CH 20V 35A 8-Pin PowerPAK SO
***ponent Sense
MOSFET SIR410DP SO8FL N 0.0063R 20V 35A
***ure Electronics
N-CH POWERPAK SO-8 BWL 20V 4.8 MOHM@10V- LEAD(PB) AND HALOGEN FREE
***ment14 APAC
MOSFET, N-CH, 20V, 35A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Power Dissipation Pd:36W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 20 V 0.0048 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
***enic
20V 35A 4.8m´Î@10V20A 3.8W 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 20V, 35A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
***et Japan
Transistor MOSFET Array Dual N-Channel 25V 16A/31A 8-Pin TISON T/R
***ark
Mosfet, Dual N-Ch, 25V, 40A, Tison-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TISON-8, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
Parte # Mfg. Descripción Valores Precio
FDMS3600AS
DISTI # FDMS3600ASCT-ND		ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMS3600AS
    DISTI # FDMS3600ASDKR-ND    		ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMS3600AS
      DISTI # FDMS3600ASTR-ND      		ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFN
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.8197
      FDMS3600AS
      DISTI # FDMS3600AS      		ON SemiconductorTrans MOSFET N-CH 25V 15A/30A 8-Pin PQFN T/R - Bulk (Alt: FDMS3600AS)
      Min Qty: 313
      Container: Bulk      		Americas - 0
        FDMS3600AS
        DISTI # FDMS3600AS        		ON SemiconductorTrans MOSFET N-CH 25V 15A/30A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3600AS)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 0
        • 3000:$0.9409
        • 6000:$0.9349
        • 12000:$0.9229
        • 18000:$0.9109
        • 30000:$0.8879
        FDMS3600AS
        DISTI # 68X0374        		ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
        • 1:$1.1100
        FDMS3600AS
        DISTI # 512-FDMS3600AS        		ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
        RoHS: Compliant        		0
        • 1:$1.6200
        • 10:$1.3800
        • 100:$1.1000
        • 500:$0.9670
        • 1000:$0.8010
        • 3000:$0.7460
        • 6000:$0.7180
        • 9000:$0.6900
        FDMS3600ASFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 15A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		12385
        • 1000:$1.0500
        • 500:$1.1100
        • 100:$1.1500
        • 25:$1.2000
        • 1:$1.3000
        Imagen Parte # Descripción
        FDMS3622S

        Mfr.#: FDMS3622S

        OMO.#: OMO-FDMS3622S

        		 MOSFET PowerStage 25V Dual N-Channel MOSFET
        FDMS3626S

        Mfr.#: FDMS3626S

        OMO.#: OMO-FDMS3626S

        		 MOSFET 25V Dual N-Channel MOSFET
        FDMS3500

        Mfr.#: FDMS3500

        OMO.#: OMO-FDMS3500

        		 MOSFET 75V N-Channel PowerTrench
        FDMS3620S

        Mfr.#: FDMS3620S

        OMO.#: OMO-FDMS3620S

        		 MOSFET 25V Asymtrc Dual NCh MOSFET PowerTrench
        FDMS3615S

        Mfr.#: FDMS3615S

        OMO.#: OMO-FDMS3615S

        		 MOSFET DUAL N-Channel PowerTrench MOSFET
        FDMS3602S

        Mfr.#: FDMS3602S

        OMO.#: OMO-FDMS3602S

        		 MOSFET 25V Dual N-Channel PowerTrench MOSFET
        FDMS3616S

        Mfr.#: FDMS3616S

        OMO.#: OMO-FDMS3616S

        		 MOSFET 25V Asymmetric 2xNCh MOSFET PowerTrench
        FDMS3006SDC

        Mfr.#: FDMS3006SDC

        OMO.#: OMO-FDMS3006SDC-ON-SEMICONDUCTOR

        		 MOSFET N-CH 30V 34A 8-PQFN
        FDMS3602S_P

        Mfr.#: FDMS3602S_P

        OMO.#: OMO-FDMS3602S-P-1190

        		 Trans MOSFET N-CH 25V 30A/40A 8-Pin PQFN T/R (Alt: FDMS3602S-P)
        FDMS3668S

        Mfr.#: FDMS3668S

        OMO.#: OMO-FDMS3668S-ON-SEMICONDUCTOR

        		 MOSFET 2N-CH 30V 13A/18A 8-PQFN
        Disponibilidad
        Valores:
        Available
        En orden:
        1986
        Ingrese la cantidad:
        El precio actual de FDMS3600AS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,60 US$
        1,60 US$
        10
        1,36 US$
        13,60 US$
        100
        1,08 US$
        108,00 US$
        500
        0,95 US$
        476,00 US$
        1000
        0,79 US$
        788,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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