PD85035-E

PD85035-E
Mfr. #:
PD85035-E
Fabricante:
STMicroelectronics
Descripción:
RF MOSFET Transistors POWER R.F. N-Ch Trans
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PD85035-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
PD85035-E más información PD85035-E Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
8 A
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Ganar:
14.9 dB
Potencia de salida:
35 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 165 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerSO-12
Embalaje:
Tubo
Configuración:
Único
Frecuencia de operación:
870 MHz
Serie:
PD85035-E
Escribe:
RF Power MOSFET
Marca:
STMicroelectronics
Modo de canal:
Mejora
Sensible a la humedad:
Yes
Pd - Disipación de energía:
95 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 500 mV, 15 V
Tags
PD8503, PD850, PD85, PD8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube
***ure Electronics
PD85035-E Series 870 MHz 35 W 40 V N-Channel RF Power Transistor - POWERSO-10RF
***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Straight lead) Tube
***icroelectronics
35W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
Power Field-Effect Transistor, 8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
RF MOSFET Transistors POWER R.F. N-Ch Trans
***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***el Electronic
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Straight lead) T/R
***r Electronics
Power Field-Effect Transistor, 8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
Common source N-channel, lateral field-effect RF power transistor.
*** Electronic Components
RF MOSFET Transistors POWER R.F. N-Ch Trans
***ponent Stockers USA
8 A 40 V N-CHANNEL Si POWER MOSFET
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
*** Source Electronics
RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 60V 9A N-Channel No-Cancel/No-Return
***ponent Stockers USA
9 A 60 V 0.17 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 9A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***(Formerly Allied Electronics)
MOSFET, 100V, 11A, 185 mOhm, 13.3 nC Qg, Logic Level, D-Pak
***ure Electronics
Single N-Channel 100 V 185 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:48W; No. of Pins:3Pins RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 9 Milliohms; ID 10A; SO-8; PD 2.5W; VGS +/-12V
***ure Electronics
Single N-Channel 40 V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8
***ment14 APAC
N CHANNEL MOSFET, 40V, 10A, SOIC; TRANSI; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
*** Source Electronics
Trans MOSFET N-CH 40V 10A 8-Pin SOIC T/R / MOSFET N-CH 40V 10A 8-SOIC
***roFlash
Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET N, LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipatio
Parte # Mfg. Descripción Valores Precio
PD85035-E
DISTI # 497-8299-5-ND
STMicroelectronicsFET RF 40V 870MHZ
RoHS: Compliant
Min Qty: 1
Container: Tube
401In Stock
  • 100:$26.0528
  • 50:$29.1380
  • 1:$33.0800
PD85035-E
DISTI # PD85035-E
STMicroelectronicsTrans MOSFET N-CH 40V 8A 3-Pin PowerSO Tube - Bag (Alt: PD85035-E)
RoHS: Compliant
Min Qty: 400
Container: Bag
Americas - 0
  • 400:$25.5900
  • 800:$24.3900
  • 1600:$23.2900
  • 2400:$22.2900
  • 4000:$21.7900
PD85035-E
DISTI # 511-PD85035-E
STMicroelectronicsRF MOSFET Transistors POWER R.F. N-Ch Trans
RoHS: Compliant
0
  • 1:$33.0800
  • 5:$32.7400
  • 10:$30.5100
  • 25:$29.1400
  • 100:$26.0600
  • 250:$24.8600
PD85035TR-E
DISTI # 511-PD85035TR-E
STMicroelectronicsRF MOSFET Transistors POWER R.F. N-Ch Trans
RoHS: Compliant
0
    PD85035-E
    DISTI # PD85035-E
    STMicroelectronicsRF POWER TRANSISTOR
    RoHS: Compliant
    0
    • 400:$24.8700
    • 500:$23.5500
    • 1000:$22.3500
    Imagen Parte # Descripción
    PD85025TR-E

    Mfr.#: PD85025TR-E

    OMO.#: OMO-PD85025TR-E

    RF MOSFET Transistors POWER R.F. N-Ch Trans
    PD85006L-E

    Mfr.#: PD85006L-E

    OMO.#: OMO-PD85006L-E

    RF MOSFET Transistors RF power trans LDmoST plastic
    PD85015TR-E

    Mfr.#: PD85015TR-E

    OMO.#: OMO-PD85015TR-E

    RF MOSFET Transistors POWER R.F. N-Ch Trans
    PD85035TR-E

    Mfr.#: PD85035TR-E

    OMO.#: OMO-PD85035TR-E

    RF MOSFET Transistors POWER R.F. N-Ch Trans
    PD85035C

    Mfr.#: PD85035C

    OMO.#: OMO-PD85035C

    RF MOSFET Transistors RF Power Trans. LDMOST family
    PD85035S

    Mfr.#: PD85035S

    OMO.#: OMO-PD85035S-1190

    Nuevo y original
    PD8572P

    Mfr.#: PD8572P

    OMO.#: OMO-PD8572P-1190

    Nuevo y original
    PD85035STR1-E

    Mfr.#: PD85035STR1-E

    OMO.#: OMO-PD85035STR1-E-STMICROELECTRONICS

    RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
    PD85015TR-E

    Mfr.#: PD85015TR-E

    OMO.#: OMO-PD85015TR-E-STMICROELECTRONICS

    RF MOSFET Transistors POWER R.F. N-Ch Trans
    PD85015-E

    Mfr.#: PD85015-E

    OMO.#: OMO-PD85015-E-STMICROELECTRONICS

    RF MOSFET Transistors POWER R.F. N-Ch Trans
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de PD85035-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    33,08 US$
    33,08 US$
    5
    32,74 US$
    163,70 US$
    10
    30,51 US$
    305,10 US$
    25
    29,14 US$
    728,50 US$
    100
    26,06 US$
    2 606,00 US$
    250
    24,86 US$
    6 215,00 US$
    500
    23,66 US$
    11 830,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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