 | |  | |
| PartNumber | ZXMN6A09DN8TA | ZXMN6A09DN8TC | ZXMN6A09DN8TA-CUT TAPE |
| Description | MOSFET Dl 60V N-Chnl UMOS | MOSFET 60V N-Chan | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 5.1 A | 5.1 A | - |
| Rds On Drain Source Resistance | 40 mOhms | 40 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 1.25 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Series | ZXMN6A | - | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 4 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 4.6 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25.3 ns | 25.3 ns | - |
| Typical Turn On Delay Time | 4.9 ns | 4.9 ns | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Product | - | MOSFET Small Signal | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN6A09DN8TA | MOSFET Dl 60V N-Chnl UMOS | |
| ZXMN6A09DN8TC | MOSFET 60V N-Chan | ||
| ZXMN6A09DN8TA-CUT TAPE | Nuevo y original | ||
| ZXMN6A09DN8TA | IGBT Transistors MOSFET Dl 60V N-Chnl UMOS |