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ZXMN6A09DN8TA

ZXMN6A09DN8TA
Mfr. #:
ZXMN6A09DN8TA
Fabricante:
Diodes Incorporated
Descripción:
IGBT Transistors MOSFET Dl 60V N-Chnl UMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
ZXMN6A09DN8TA Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
ZXMN6A09DN8TA más información
Atributo del producto
Valor de atributo
Fabricante
Diodos incorporados
categoria de producto
FET: matrices
Serie
ZXMN6A
embalaje
Empaque alternativo de cinta cortada (CT)
Unidad de peso
74 mg
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Dual Dual Drain
Tipo FET
2 N-Channel (Dual)
Potencia máxima
1.25W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
1407pF @ 40V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
4.3A
Rds-On-Max-Id-Vgs
40 mOhm @ 8.2A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
24.2nC @ 5V
Disipación de potencia Pd
2.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
4.6 ns
Hora de levantarse
5 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
5.1 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
40 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
25.3 ns
Tiempo de retardo de encendido típico
4.9 ns
Modo de canal
Mejora
Tags
ZXMN6A09DN8T, ZXMN6A09D, ZXMN6A09, ZXMN6A0, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
***ical
Trans MOSFET N-CH 60V 5.6A Automotive 8-Pin SOIC T/R
***ied Electronics & Automation
MOSFET Dual N-Channel 60V 5.6A SOIC8
***ark
Mosfet Bvdss: 41V~60V So-8 T&r 0.5K Rohs Compliant: Yes
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Parte # Mfg. Descripción Valores Precio
ZXMN6A09DN8TA
DISTI # V72:2272_06708106		Zetex / Diodes IncTrans MOSFET N-CH 60V 5.6A Automotive 8-Pin SOIC T/R
RoHS: Compliant		2
  • 1:$0.7811
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8TR-ND		Diodes IncorporatedMOSFET 2N-CH 60V 4.3A 8-SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		On Order
  • 500:$1.2750
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8CT-ND		Diodes IncorporatedMOSFET 2N-CH 60V 4.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8DKR-ND		Diodes IncorporatedMOSFET 2N-CH 60V 4.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8TA		Diodes IncorporatedTrans MOSFET N-CH 60V 5.6A 8-Pin SOIC T/R (Alt: ZXMN6A09DN8TA)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Europe - 0
  • 500:€0.4119
  • 1000:€0.3919
  • 2000:€0.3859
  • 3000:€0.3799
  • 5000:€0.3629
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8TA		Diodes IncorporatedTrans MOSFET N-CH 60V 5.6A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN6A09DN8TA)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$0.5029
  • 1000:$0.4789
  • 2000:$0.4559
  • 3000:$0.4359
  • 5000:$0.4259
ZXMN6A09DN8TA
DISTI # 70438838		Diodes IncorporatedMOSFET Dual N-Channel 60V 5.6A SOIC8
RoHS: Compliant		0
  • 10:$1.8200
  • 40:$1.5900
  • 100:$1.4200
  • 200:$1.2700
ZXMN6A09DN8TA
DISTI # 522-ZXMN6A09DN8TA		Diodes IncorporatedMOSFET Dl 60V N-Chnl UMOS
RoHS: Compliant		0
  • 500:$1.0600
ZXMN6A09DN8TAZetex / Diodes Inc3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET573
  • 268:$0.6500
  • 49:$0.7500
  • 1:$2.5000
ZXMN6A09DN8TAZetex / Diodes Inc 695
  • 3:$1.8750
  • 12:$1.2188
  • 43:$0.7031
  • 144:$0.6000
  • 310:$0.5250
ZXMN6A09DN8TAZetex / Diodes Inc 249
  • 3:$1.8750
  • 12:$1.2188
  • 43:$0.7031
  • 144:$0.6000
ZXMN6A09DN8TAZetex / Diodes Inc 12595
    Imagen Parte # Descripción
    ZXMN6A07F

    Mfr.#: ZXMN6A07F

    OMO.#: OMO-ZXMN6A07F-1190

    		 Nuevo y original
    ZXMN6A07ZTA

    Mfr.#: ZXMN6A07ZTA

    OMO.#: OMO-ZXMN6A07ZTA-DIODES

    		 MOSFET N-CH 60V 1.9A SOT-89
    ZXMN6A08E6QTA

    Mfr.#: ZXMN6A08E6QTA

    OMO.#: OMO-ZXMN6A08E6QTA-DIODES

    		 MOSFET 60V N-CH ENH FET 20VGS 80MOHM MOSFET N-CH 60V 2.8A SOT23-6
    ZXMN6A25KTC

    Mfr.#: ZXMN6A25KTC

    OMO.#: OMO-ZXMN6A25KTC-DIODES

    		 Trans MOSFET N-CH 60V 10.7A Automotive 3-Pin(2+Tab) DPAK T/R
    ZXMN6A07FTA-CUT TAPE

    Mfr.#: ZXMN6A07FTA-CUT TAPE

    OMO.#: OMO-ZXMN6A07FTA-CUT-TAPE-1190

    		 Nuevo y original
    ZXMN6A09DN8TA-CUT TAPE

    Mfr.#: ZXMN6A09DN8TA-CUT TAPE

    OMO.#: OMO-ZXMN6A09DN8TA-CUT-TAPE-1190

    		 Nuevo y original
    ZXMN6A09GTA-CUT TAPE

    Mfr.#: ZXMN6A09GTA-CUT TAPE

    OMO.#: OMO-ZXMN6A09GTA-CUT-TAPE-1190

    		 Nuevo y original
    ZXMN6A25DN8TA-CUT TAPE

    Mfr.#: ZXMN6A25DN8TA-CUT TAPE

    OMO.#: OMO-ZXMN6A25DN8TA-CUT-TAPE-1190

    		 Nuevo y original
    ZXMN6A11GTA

    Mfr.#: ZXMN6A11GTA

    OMO.#: OMO-ZXMN6A11GTA-DIODES

    		 Darlington Transistors MOSFET 60V N-Chnl UMOS
    ZXMN6A11Z

    Mfr.#: ZXMN6A11Z

    OMO.#: OMO-ZXMN6A11Z-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de ZXMN6A09DN8TA es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,64 US$
    0,64 US$
    10
    0,61 US$
    6,07 US$
    100
    0,58 US$
    57,50 US$
    500
    0,54 US$
    271,50 US$
    1000
    0,51 US$
    511,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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