ZXMN2B03

ZXMN2B03E6TA vs ZXMN2B03E6 vs ZXMN2B03E6TA-CUT TAPE

 
PartNumberZXMN2B03E6TAZXMN2B03E6ZXMN2B03E6TA-CUT TAPE
DescriptionMOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.4 A--
Rds On Drain Source Resistance40 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge14.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small Signal--
SeriesZXMN2--
Transistor Type1 N-Channel--
Width1.8 mm--
BrandDiodes Incorporated--
Fall Time6.2 ns--
Product TypeMOSFET--
Rise Time6.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33.9 ns--
Typical Turn On Delay Time4.2 ns--
Unit Weight0.000529 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN2B03E6TA MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap
ZXMN2B03E6 Nuevo y original
ZXMN2B03E6TA-CUT TAPE Nuevo y original
ZXMN2B03E6TA Darlington Transistors MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap
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