ZXMN10A11

ZXMN10A11KTC vs ZXMN10A11GTA

 
PartNumberZXMN10A11KTCZXMN10A11GTA
DescriptionMOSFET N-Chan 100V MOSFET (UMOS)MOSFET 100V N-Chnl UMOS
ManufacturerDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3SOT-223-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current3.5 A2.4 A
Rds On Drain Source Resistance350 mOhms350 mOhms
Vgs th Gate Source Threshold Voltage4 V2 V
Vgs Gate Source Voltage20 V10 V
Qg Gate Charge5.4 nC5.4 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation8.5 W2 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height2.39 mm1.65 mm
Length6.73 mm6.7 mm
SeriesZXMN10AZXMN10A
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm3.7 mm
BrandDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min4 S4 S
Fall Time3.5 ns3.5 ns
Product TypeMOSFETMOSFET
Rise Time1.7 ns1.7 ns
Factory Pack Quantity25001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time7.4 ns7.4 ns
Typical Turn On Delay Time2.7 ns2.7 ns
Unit Weight0.139332 oz0.003951 oz
Type-MOSFET
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN10A11KTC MOSFET N-Chan 100V MOSFET (UMOS)
ZXMN10A11GTA MOSFET 100V N-Chnl UMOS
ZXMN10A11GTA Darlington Transistors MOSFET 100V N-Chnl UMOS
ZXMN10A11KTC Darlington Transistors MOSFET N-Chan 100V MOSFET (UMOS)
ZXMN10A11G MOSFET, N CHANNEL, 100V, 2.4A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.6ohm, Rds(on) Test Voltage Vgs:10V,
ZXMN10A11GTA-CUT TAPE Nuevo y original
ZXMN10A11KTC-CUT TAPE Nuevo y original
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