ZXMHC6

ZXMHC6A07N8TC vs ZXMHC6A07 vs ZXMHC6A07N8TC-CUT TAPE

 
PartNumberZXMHC6A07N8TCZXMHC6A07ZXMHC6A07N8TC-CUT TAPE
DescriptionMOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels4 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.8 A, 1.42 A--
Rds On Drain Source Resistance250 mOhms, 400 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge3.2 nC, 5.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation0.87 W--
ConfigurationQuad--
Channel ModeEnhancement--
PackagingReel--
SeriesZXMHC6--
Transistor Type2 N-Channel, 2 P-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min2.3 S, 1.8 S--
Fall Time2 ns, 5.8 ns--
Product TypeMOSFET--
Rise Time1.4 ns, 2.3 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time4.9 ns, 13 ns--
Typical Turn On Delay Time1.8 ns, 1.6 ns--
Unit Weight0.002610 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZXMHC6A07T8TA MOSFET 60V UMOS H-Bridge
ZXMHC6A07N8TC MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
ZXMHC6A07 Nuevo y original
ZXMHC6A07N8TC Trans MOSFET N/P-CH 60V 1.8A/1.42A Automotive 8-Pin SO T/R
ZXMHC6A07T8 Nuevo y original
ZXMHC6A07N8TC-CUT TAPE Nuevo y original
ZXMHC6A07T8TA-CUT TAPE Nuevo y original
ZXMHC6A07T8TA Darlington Transistors MOSFET 60V UMOS H-Bridge
Top