PartNumber | VS-GT100DA120UF | VS-GT100TP60N | VS-GT100NA120UX |
Description | Discrete Semiconductor Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr | IGBT Modules Output & SW Modules - IAP IGBT | IGBT Modules RECOMMENDED ALT 78-VS-GT105NA120UX |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | Discrete Semiconductor Modules | IGBT Modules | IGBT Modules |
RoHS | Y | - | Y |
Product | Diode Power Modules | - | - |
Type | IGBT Module | - | - |
Vf Forward Voltage | 2.8 V | - | - |
Mounting Style | SMD/SMT | Chassis Mount | SMD/SMT |
Package / Case | SOT-227-4 | INT-A-PAK | SOT-227-4 |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Configuration | Single | Half Bridge | Single |
Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay Semiconductors |
Transistor Polarity | N-Channel | - | - |
Fall Time | 118 ns | - | - |
Pd Power Dissipation | 890 W | 417 W | 463 W |
Product Type | Discrete Semiconductor Modules | IGBT Modules | IGBT Modules |
Rise Time | 55 ns | - | - |
Factory Pack Quantity | 10 | 24 | 180 |
Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
Typical Turn Off Delay Time | 244 ns | - | - |
Typical Turn On Delay Time | 131 ns | - | - |
Vgs th Gate Source Threshold Voltage | 5.8 V | - | - |
Collector Emitter Voltage VCEO Max | - | 600 V | 1.2 kV |
Collector Emitter Saturation Voltage | - | 1.65 V | 2.36 V |
Continuous Collector Current at 25 C | - | 160 A | 134 A |
Gate Emitter Leakage Current | - | 400 nA | 200 nA |
Maximum Gate Emitter Voltage | - | 20 V | 20 V |
Minimum Operating Temperature | - | - | - 40 C |
Packaging | - | - | Tube |
Tradename | - | - | HEXFRED |
Unit Weight | - | - | 1.058219 oz |