VS-ETF

VS-ETF150Y65N vs VS-ETF150Y65U vs VS-ETF075Y60U

 
PartNumberVS-ETF150Y65NVS-ETF150Y65UVS-ETF075Y60U
DescriptionIGBT Modules 650V Vces 150A Ic 3 Levels Half-BridgeIGBT Modules Output & SW Modules - EMIPAK SWITCHIGBT Modules 75A Half Bridge 3 Level Inverter
ManufacturerVishayVishayVishay
Product CategoryIGBT ModulesIGBT ModulesIGBT Modules
RoHSYYY
ProductIGBT Silicon ModulesIGBT Silicon ModulesIGBT Silicon Modules
ConfigurationHalf BridgeHalf BridgeDual
Collector Emitter Voltage VCEO Max650 V650 V600 V
Collector Emitter Saturation Voltage1.7 V1.72 V, 1.75 V-
Continuous Collector Current at 25 C201 A142 A, 201 A109 A
Gate Emitter Leakage Current600 nA600 nA200 nA, 400 nA
Pd Power Dissipation600 W417 W, 600 W294 W
Package / CaseEMIPAK-2BEMIPAK-2B-
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
PackagingTube--
BrandVishay SemiconductorsVishay SemiconductorsVishay Semiconductors
Mounting StyleChassis MountChassis MountSMD/SMT
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT ModulesIGBT Modules
Factory Pack Quantity606060
SubcategoryIGBTsIGBTsIGBTs
Minimum Operating Temperature--- 40 C
Operating Temperature Range--- 40 C to + 150 C
Fabricante Parte # Descripción RFQ
Vishay Semiconductors
Vishay Semiconductors
VS-ETF150Y65N IGBT Modules 650V Vces 150A Ic 3 Levels Half-Bridge
VS-ETF150Y65U IGBT Modules Output & SW Modules - EMIPAK SWITCH
VS-ETF075Y60U IGBT Modules 75A Half Bridge 3 Level Inverter
Vishay
Vishay
VS-ETF150Y65N IGBT 650V 150A EMIPAK-2B
VS-ETF075Y60U IGBT 600V 109A 294W EMIPAK-2B
VS-ETF150Y65U IGBT 650V 150A EMIPAK-2B
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