VP0109N3-G

VP0109N3-G vs VP0109N3-G P003 vs VP0109N3-G P002

 
PartNumberVP0109N3-GVP0109N3-G P003VP0109N3-G P002
DescriptionMOSFET 90V 8OhmMOSFET N-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochip-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage90 V90 V-
Id Continuous Drain Current250 mA250 mA-
Rds On Drain Source Resistance8 Ohms15 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkReel-
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel1 P-Channel-
TypeFET--
Width4.19 mm--
BrandMicrochip TechnologyMicrochip Technology-
Fall Time4 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time3 ns3 ns-
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8 ns8 ns-
Typical Turn On Delay Time4 ns4 ns-
Unit Weight0.016000 oz0.016000 oz-
Product-MOSFET Small Signal-
Fabricante Parte # Descripción RFQ
Microchip Technology
Microchip Technology
VP0109N3-G MOSFET 90V 8Ohm
VP0109N3-G P003 MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P013 MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-GP003 Nuevo y original
VP0109N3-G IGBT Transistors MOSFET 90V 8Ohm
VP0109N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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