VP0109N

VP0109N3-G vs VP0109N2 vs VP0109N3

 
PartNumberVP0109N3-GVP0109N2VP0109N3
DescriptionMOSFET 90V 8OhmPOWER, FETMOSFET 90V 8Ohm
ManufacturerMicrochip-SUPERTEX
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage90 V--
Id Continuous Drain Current250 mA--
Rds On Drain Source Resistance8 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulk--
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel--
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8 ns--
Typical Turn On Delay Time4 ns--
Unit Weight0.016000 oz--
Fabricante Parte # Descripción RFQ
Microchip Technology
Microchip Technology
VP0109N3-G MOSFET 90V 8Ohm
VP0109N3-G P003 MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P013 MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N2 POWER, FET
VP0109N3 MOSFET 90V 8Ohm
VP0109N3-GP003 Nuevo y original
VP0109N5 Nuevo y original
VP0109ND N-CHANNEL ENHANCEMENT-MODE
VP0109N3-G IGBT Transistors MOSFET 90V 8Ohm
VP0109N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0109N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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