 |  |  | |
| PartNumber | VEC2616-TL-H-Z-W | VEC2616-TL-H | VEC2616-TL-H-Z |
| Description | MOSFET PCH+NCH 4V DRIVE SERIES | MOSFET PCH+NCH 4V DRIVE SERIES | MOSFET N/P-CH 60V 3A/2.5A VEC8 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | VEC-8 | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 3 A | - |
| Rds On Drain Source Resistance | - | 137 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 10 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 900 mW | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Series | - | VEC2616 | - |
| Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
| Fall Time | - | 22 ns | - |
| Rise Time | - | 7.5 ns | - |
| Typical Turn Off Delay Time | - | 41 ns | - |
| Typical Turn On Delay Time | - | 7.3 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| VEC2616-TL-H-Z-W | MOSFET PCH+NCH 4V DRIVE SERIES | ||
| VEC2616-TL-HX | Nuevo y original | ||
ON Semiconductor |
VEC2616-TL-H | MOSFET PCH+NCH 4V DRIVE SERIES | |
| VEC2616-TL-H | MOSFET N/P-CH 60V 3A/2.5A VEC8 | ||
| VEC2616-TL-H-Z | MOSFET N/P-CH 60V 3A/2.5A VEC8 | ||
| VEC2616-TL-H-Z-W | PCH+NCH 4V DRIVE SERIES |