 | | | |
| PartNumber | TSM2311CX | TSM2311 | TSM2311CX RF |
| Description | MOSFET 20V P channel MOSFET | ||
| Manufacturer | TSC | TSC | - |
| Product Category | IC Chips | IC Chips | - |
| Packaging | Reel | Reel | - |
| Part Aliases | RFG | RFG | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | SOT-23-3 | SOT-23-3 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Pd Power Dissipation | 900 mW | 900 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Fall Time | 35 ns | 35 ns | - |
| Rise Time | 35 ns | 35 ns | - |
| Vgs Gate Source Voltage | 8 V | 8 V | - |
| Id Continuous Drain Current | - 4 A | - 4 A | - |
| Vds Drain Source Breakdown Voltage | - 20 V | - 20 V | - |
| Vgs th Gate Source Threshold Voltage | - 1.4 V | - 1.4 V | - |
| Rds On Drain Source Resistance | 55 mOhms | 55 mOhms | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Typical Turn Off Delay Time | 45 ns | 45 ns | - |
| Typical Turn On Delay Time | 22 ns | 22 ns | - |
| Channel Mode | Enhancement | Enhancement | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM2311CX RFG | MOSFET 20V P channel Mosfet | |
| TSM2311CX RFG | MOSFET P-CHANNEL 20V 4A SOT23 | ||
| TSM2311CX | MOSFET 20V P channel MOSFET | ||
| TSM2311 | Nuevo y original | ||
| TSM2311CX RF | Nuevo y original | ||
| TSM2311CXRF | Nuevo y original |