PartNumber | TPS1120DR | TPS1120D | TPS1120DG4 |
Description | MOSFET Dual P-Ch Enh-Mode MOSFET | MOSFET Dual P-Ch Enh-Mode MOSFET | MOSFET Dual P-Ch Enh-Mode MOSFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOIC-8 | SOIC-8 | SOIC-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 15 V | 15 V | 15 V |
Id Continuous Drain Current | 1.17 A | 1.17 A | 2.7 A |
Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | 180 mOhms |
Vgs Gate Source Voltage | 2 V, - 15 V | 2 V, - 15 V | 2 V, - 15 V |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
Pd Power Dissipation | 840 mW | 840 mW | 840 mW |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Tube | Tube |
Height | 1.75 mm | 1.75 mm | 1.75 mm |
Length | 4.9 mm | 4.9 mm | 4.9 mm |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Series | TPS1120 | TPS1120 | TPS1120 |
Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
Type | PMOS Switches | PMOS Switches | Dual P-Channel Enhancement-Mode |
Width | 3.9 mm | 3.9 mm | 3.9 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Fall Time | 10 ns | 10 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 10 ns | 10 ns |
Factory Pack Quantity | 2500 | 75 | 75 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns | 13 ns | 13 ns |
Typical Turn On Delay Time | 4.5 ns | 4.5 ns | 4.5 ns |
Unit Weight | 0.002677 oz | 0.002677 oz | 0.002677 oz |
Forward Transconductance Min | - | - | 2.5 S |