 | | | |
| PartNumber | TPN11006NL,LQ | TPN11003NL,LQ | TPN11006PL,LQ |
| Description | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSON-Advance-8 | TSON-Advance-8 | TSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V | 60 V |
| Id Continuous Drain Current | 37 A | 31 A | 54 A |
| Rds On Drain Source Resistance | 17 mOhms | 12.6 mOhms | 11.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.3 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 23 nC | 7.5 nC | 17 nC |
| Pd Power Dissipation | 30 W | 19 W | 61 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.85 mm | 0.85 mm | - |
| Length | 3.1 mm | 3.1 mm | - |
| Series | TPN11006NL | TPN11003NL | TPN11006PL |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.1 mm | 3.1 mm | - |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 7.1 ns | 1.9 ns | 3.8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 2.1 ns | 2.7 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 14 ns | 23 ns |
| Typical Turn On Delay Time | 11 ns | 7.5 ns | 16 ns |
| Unit Weight | 0.000705 oz | 0.000705 oz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | + 175 C |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
TPN11006NL,LQ | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | |
| TPN11003NL,LQ | MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | ||
| TPN11006PL,LQ | MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ | ||
| TPN1110ENH,L1Q | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | ||
| TPN11003NLLQCT-ND | Nuevo y original | ||
| TPN11003NLLQDKR-ND | Nuevo y original | ||
| TPN11003NLLQTR-ND | Nuevo y original | ||
| TPN11006NLLQCT-ND | Nuevo y original | ||
| TPN11006NLLQDKR-ND | Nuevo y original | ||
| TPN11006NLLQTR-ND | Nuevo y original | ||
| TPN1110ENHL1QCT-ND | Nuevo y original | ||
| TPN1110ENHL1QDKR-ND | Nuevo y original | ||
| TPN1110ENHL1QTR-ND | Nuevo y original | ||
| TPN11003NL,LQ | Darlington Transistors MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | ||
| TPN1110ENH,L1Q | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | ||
| TPN11003NL | Nuevo y original | ||
| TPN11003NL LQ | Nuevo y original | ||
| TPN11003NL,LQ(S | Nuevo y original | ||
| TPN11003NLLQ | MOSFET POWER MOSFET TRANSISTOR | ||
| TPN11003NLLQ(S | Nuevo y original | ||
| TPN11006N | Nuevo y original | ||
| TPN11006NL | Nuevo y original | ||
| TPN11006NL LQ(S | Nuevo y original | ||
| TPN11006NL,LQ | MOSFETs Silicon N-channel MOS | ||
| TPN11006NLLQ | MOSFET POWER MOSFET TRANSISTOR | ||
| TPN11006NLLQ(S | Nuevo y original | ||
| TPN11006PL | Nuevo y original | ||
| TPN1110ENH | Nuevo y original | ||
| TPN1110ENH,L1Q(M | Nuevo y original | ||
| TPN1110ENHL1Q | MOSFET POWER MOSFET TRANSISTOR | ||
| TPN1110ENHL1Q(M | Nuevo y original | ||
| TPN115759 | Nuevo y original | ||
| TPN11006PL,LQ | MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ |