TN011

TN0110N3-G vs TN0110 vs TN0110N3

 
PartNumberTN0110N3-GTN0110TN0110N3
DescriptionMOSFET 100V 3Ohm0110MOSFET 100V 3Ohm
ManufacturerMicrochipSUPERTEXSUPERTEX
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current350 mA--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulk--
Height5.33 mm--
Length5.21 mm--
Transistor Type1 N-Channel--
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Forward Transconductance Min225 mS--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time6 ns--
Typical Turn On Delay Time2 ns--
Unit Weight0.016000 oz--
Fabricante Parte # Descripción RFQ
Microchip Technology
Microchip Technology
TN0110N3-G-P002 MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G MOSFET 100V 3Ohm
TN0110N3-G-P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110 0110
TN0110N3 MOSFET 100V 3Ohm
TN0110N3-G MOSFET N-CH 100V 350MA TO92-3
TN0110NG-G Nuevo y original
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