TK7A90E,S

TK7A90E,S4X vs TK7A90E,S4X(S) vs TK7A90E,S4X(S

 
PartNumberTK7A90E,S4XTK7A90E,S4X(S)TK7A90E,S4X(S
DescriptionMOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SISMOSFETs
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance1.6 Ohms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge32 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height15 mm--
Length10 mm--
SeriesTK7A90E--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time55 ns--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK7A90E,S4X MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
TK7A90E,S4X MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
TK7A90E,S4X(S) MOSFETs
TK7A90E,S4X(S Nuevo y original
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