PartNumber | TK39J60W,S1VQ | TK39J60W | TK39J60W5 |
Description | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC | ||
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-3PN-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 38.8 A | - | - |
Rds On Drain Source Resistance | 65 mOhms | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 135 nC | - | - |
Pd Power Dissipation | 270 W | - | - |
Configuration | Single | - | - |
Height | 20 mm | - | - |
Length | 15.5 mm | - | - |
Series | TK39J60W | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.5 mm | - | - |
Brand | Toshiba | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 25 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.245577 oz | - | - |