TH58BVG3S0H

TH58BVG3S0HTA00 vs TH58BVG3S0HBAI4 vs TH58BVG3S0HBAI6

 
PartNumberTH58BVG3S0HTA00TH58BVG3S0HBAI4TH58BVG3S0HBAI6
DescriptionNAND Flash 8Gb 24nm SLC NAND (EEPROM)
ManufacturerToshiba--
Product CategoryNAND Flash--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTSOP-48--
Memory Size8 Gbit--
Interface TypeParallel--
Organization1 G x 8--
Data Bus Width8 bit--
Supply Voltage Min2.7 V--
Supply Voltage Max3.6 V--
Supply Current Max30 mA--
Minimum Operating Temperature0 C--
Maximum Operating Temperature+ 70 C--
PackagingTray--
Memory TypeNAND--
BrandToshiba Memory--
Maximum Clock Frequency---
Moisture SensitiveYes--
Product TypeNAND Flash--
Factory Pack Quantity96--
SubcategoryMemory & Data Storage--
Fabricante Parte # Descripción RFQ
Toshiba Memory
Toshiba Memory
TH58BVG3S0HTA00 NAND Flash 8Gb 24nm SLC NAND (EEPROM)
TH58BVG3S0HTAI0 NAND Flash 8Gb 24nm SLC NAND (EEPROM)
TH58BVG3S0HTA00 EEPROM 8 Gbit CMOS NAND EEPROM
TH58BVG3S0HTAI0 Flash Memory 8 GBIT CMOS NAND EEPROM
TH58BVG3S0HTAI0B4H TOSTH58BVG3S0HTAI0B4H 8 GBIT (1G × 8 BIT (Alt: TH58BVG3S0HTAI0B4H)
TH58BVG3S0HBAI4 Nuevo y original
TH58BVG3S0HBAI6 Nuevo y original
TH58BVG3S0HTA00-ND Nuevo y original
TH58BVG3S0HTAI0-ND Nuevo y original
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