PartNumber | TGF2023-2-02 | TGF2023-2-01 | TGF2023-2-05 |
Description | RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB | RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB | RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB |
Manufacturer | Qorvo | Qorvo | Qorvo |
Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y | Y |
Transistor Type | HEMT | HEMT | - |
Technology | GaN SiC | GaN SiC | GaN |
Transistor Polarity | N-Channel | N-Channel | - |
Package / Case | Die | Die | DFN-6 |
Packaging | Gel Pack | Gel Pack | Reel |
Product | RF JFET | RF JFET | - |
Series | TGF | TGF | QPD |
Type | GaN SiC HEMT | GaN SiC HEMT | - |
Brand | Qorvo | Qorvo | Qorvo |
Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
Factory Pack Quantity | 100 | 50 | 250 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 1099622 | 1099624 | 1131037 |
Gain | - | - | 16.2 dB |
Vds Drain Source Breakdown Voltage | - | - | - |
Vgs Gate Source Breakdown Voltage | - | - | - |
Id Continuous Drain Current | - | - | - |
Output Power | - | - | 90 W |
Maximum Drain Gate Voltage | - | - | - |
Minimum Operating Temperature | - | - | - 40 C |
Maximum Operating Temperature | - | - | - |
Pd Power Dissipation | - | - | - |
Mounting Style | - | - | SMD/SMT |
Application | - | - | Microcell Base Station, W-CDMA / LTE |
Configuration | - | - | Single |
Operating Frequency | - | - | 1.8 GHz to 3.8 GHz |
Forward Transconductance Min | - | - | - |
Development Kit | - | - | QPD0060PCB4B01 |