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TGF2023-2-10

TGF2023-2-10
Mfr. #:
TGF2023-2-10
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2023-2-10 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TGF2023-2-10 más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
18 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
36 V
Vgs - Voltaje de ruptura de puerta-fuente:
145 V
Id - Corriente de drenaje continua:
24 A
Potencia de salida:
260 W
Voltaje máximo de la puerta de drenaje:
48 V
Temperatura máxima de funcionamiento:
+ 250 C
Pd - Disipación de energía:
288 W
Estilo de montaje:
SMD / SMT
Embalaje:
Bandeja
Configuración:
Único
Frecuencia de operación:
2 GHz
Producto:
Transistor de potencia RF
Serie:
T1G
Escribe:
GaN SiC HEMT
Marca:
Qorvo
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
25
Subcategoría:
Transistores
Parte # Alias:
1110346
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 50 W, 11.5 dB, 28 V, DIE, GaN
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
Parte # Mfg. Descripción Valores Precio
TGF2023-2-10
DISTI # 772-TGF2023-2-10		QorvoRF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
RoHS: Compliant		0
  • 50:$71.5800
  • 100:$63.2500
1099951
DISTI # TGF2023-2-10		QorvoRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$59.3200
Imagen Parte # Descripción
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05

 RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2021-04-SD T/R

Mfr.#: TGF2021-04-SD T/R

OMO.#: OMO-TGF2021-04-SD-T-R-318

 RF JFET Transistors DC-4GHz 5Volts
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05-318

 RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2022-48

Mfr.#: TGF2022-48

OMO.#: OMO-TGF2022-48-318

 RF JFET Transistors DC-20GHz 4.8mm Pwr pHEMT (0.35um)
TGF2023-2-20

Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20-318

 RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

 RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2021-04-SD-T/R

Mfr.#: TGF2021-04-SD-T/R

OMO.#: OMO-TGF2021-04-SD-T-R-1190

 Nuevo y original
TGF2021-08-SG

Mfr.#: TGF2021-08-SG

OMO.#: OMO-TGF2021-08-SG-1152

 RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm
TGF202104SD

Mfr.#: TGF202104SD

OMO.#: OMO-TGF202104SD-1190

 Nuevo y original
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

 RF JFET Transistors 5.0mm GaN Discrete
Disponibilidad
Valores:
200
En orden:
2183
Ingrese la cantidad:
El precio actual de TGF2023-2-10 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
50
71,58 US$
3 579,00 US$
100
63,25 US$
6 325,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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