PartNumber | TC58NYG1S3HBAI4 | TC58NYG1S3EBAI5 | TC58NYG1S3HBAI4-ND |
Description | NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM) | NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM) | |
Manufacturer | Toshiba | Toshiba | - |
Product Category | NAND Flash | NAND Flash | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TFBGA-63 | TFBGA-63 | - |
Memory Size | 2 Gbit | 2 Gbit | - |
Interface Type | Parallel | Parallel | - |
Organization | 256 M x 8 | 256 M x 8 | - |
Timing Type | Synchronous | Synchronous | - |
Data Bus Width | 8 bit | 8 bit | - |
Supply Voltage Min | 1.7 V | 1.7 V | - |
Supply Voltage Max | 1.95 V | 1.95 V | - |
Supply Current Max | 30 mA | 30 mA | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 85 C | + 85 C | - |
Packaging | Tray | Tray | - |
Memory Type | NAND | NAND | - |
Product | NAND Flash | NAND Flash | - |
Speed | 25 ns | 25 ns | - |
Architecture | Block Erase | Block Erase | - |
Brand | Toshiba Memory | Toshiba Memory | - |
Maximum Clock Frequency | - | - | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | NAND Flash | NAND Flash | - |
Factory Pack Quantity | 210 | 180 | - |
Subcategory | Memory & Data Storage | Memory & Data Storage | - |