TC58NYG1

TC58NYG1S3HBAI4 vs TC58NYG1S3EBAI5 vs TC58NYG1S3HBAI4-ND

 
PartNumberTC58NYG1S3HBAI4TC58NYG1S3EBAI5TC58NYG1S3HBAI4-ND
DescriptionNAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM)
ManufacturerToshibaToshiba-
Product CategoryNAND FlashNAND Flash-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTFBGA-63TFBGA-63-
Memory Size2 Gbit2 Gbit-
Interface TypeParallelParallel-
Organization256 M x 8256 M x 8-
Timing TypeSynchronousSynchronous-
Data Bus Width8 bit8 bit-
Supply Voltage Min1.7 V1.7 V-
Supply Voltage Max1.95 V1.95 V-
Supply Current Max30 mA30 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
PackagingTrayTray-
Memory TypeNANDNAND-
ProductNAND FlashNAND Flash-
Speed25 ns25 ns-
ArchitectureBlock EraseBlock Erase-
BrandToshiba MemoryToshiba Memory-
Maximum Clock Frequency---
Moisture SensitiveYesYes-
Product TypeNAND FlashNAND Flash-
Factory Pack Quantity210180-
SubcategoryMemory & Data StorageMemory & Data Storage-
Fabricante Parte # Descripción RFQ
Toshiba Memory
Toshiba Memory
TC58NYG1S3HBAI6 NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
TC58NYG1S3HBAI4 NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
TC58NYG1S3EBAI5 NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM)
TC58NYG1S3HBAI4_TRAY Nuevo y original
TC58NYG1S8EBAI4 Nuevo y original
TC58NYG1S8HBAI6 Nuevo y original
TC58NYG1S8HBAI6/2GBIT Nuevo y original
TC58NYG1S8HBAI6JD2 Nuevo y original
TC58NYG1S3HBAI6 EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM
TC58NYG1S3HBAI4 Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG1S3EBAI5 Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG1S3HBAI4-ND Nuevo y original
TC58NYG1S3HBAI6-ND Nuevo y original
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