 |  | | |
| PartNumber | TC58BYG0S3HBAI6 | TC58BYG0S3HBAI4 | TC58BYG1S3HBAI4 |
| Description | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM) |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VFBGA-67 | TFBGA-63 | TFBGA-63 |
| Memory Size | 1 Gbit | 1 Gbit | 2 Gbit |
| Interface Type | Parallel | Parallel | Parallel |
| Organization | 128 M x 8 | 128 M x 8 | 256 M x 8 |
| Data Bus Width | 8 bit | 8 bit | 8 bit |
| Supply Voltage Min | 1.7 V | 1.7 V | 1.7 V |
| Supply Voltage Max | 1.95 V | 1.95 V | 1.95 V |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Packaging | Tray | Tray | Tray |
| Memory Type | NAND | NAND | NAND |
| Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NAND Flash | NAND Flash | NAND Flash |
| Factory Pack Quantity | 338 | 210 | 210 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Timing Type | - | Synchronous | Synchronous |
| Supply Current Max | - | 30 mA | 30 mA |
| Product | - | NAND Flash | NAND Flash |
| Speed | - | 25 ns | 25 ns |
| Architecture | - | Block Erase | Block Erase |
| Maximum Clock Frequency | - | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58BYG2S0HBAI4 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | |
| TC58BYG1S3HBAI6 | NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BYG0S3HBAI6 | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BYG0S3HBAI4 | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BYG1S3HBAI4 | NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BYG2S0HBAI6 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58BYG0S3HAI6 | Nuevo y original | ||
| TC58BYG0S3HBAI4(JAH) | Nuevo y original | ||
| TC58BYG0S8EBAIA | Nuevo y original | ||
| TC58BYG1S3HBAI6 | IC FLASH 2G PARALLEL 67VFBGA Benand | ||
| TC58BYG2S0HBAI6 | IC FLASH 4G PARALLEL 67VFBGA Benand | ||
| TC58BYG0S3HBAI6 | IC FLASH 1G PARALLEL 67VFBGA Benand | ||
| TC58BYG1S3HBAI4 | 2GB SLC NAND BGA 24NM I TEMP (EE Benand | ||
| TC58BYG0S3HBAI4 | 1GB SLC NAND BGA 24NM I TEMP (EE Benand | ||
| TC58BYG1S3HBAI4_REEL | SLC NAND Flash Serial 1.8V 2Gbit 256M x 8Bit 63-Pin TFBGA (Alt: TC58BYG1S3HBAI4) | ||
| TC58BYG0S3HBAI4-ND | Nuevo y original | ||
| TC58BYG0S3HBAI6-ND | Nuevo y original | ||
| TC58BYG1S3HBAI4-ND | Nuevo y original | ||
| TC58BYG1S3HBAI6-ND | Nuevo y original | ||
| TC58BYG2S0HBAI4 | 4GB SLC BENAND 24NM BGA 9X11 (EE Benand | ||
| TC58BYG2S0HBAI4-ND | Nuevo y original | ||
| TC58BYG2S0HBAI6-ND | Nuevo y original |