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TC58BYG0S3HBAI6

TC58BYG0S3HBAI6
Mfr. #:
TC58BYG0S3HBAI6
Fabricante:
Toshiba Memory
Descripción:
IC FLASH 1G PARALLEL 67VFBGA Benand
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TC58BYG0S3HBAI6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Toshiba Semiconductor y almacenamiento
categoria de producto
Memoria
Serie
Benand
embalaje
Bandeja
Paquete-Estuche
67-VFBGA
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
1.7 V ~ 1.95 V
Paquete de dispositivo de proveedor
67-VFBGA (6.5x8)
Tamaño de la memoria
1G (128M x 8)
Tipo de memoria
EEPROM - NAND
Velocidad
25ns
Formato de memoria
EEPROM - Serie
Tags
TC58BYG0S3HB, TC58BYG0S3, TC58BYG0, TC58BY, TC58B, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
NAND Flash Parallel 1.8V 1G-bit 128M x 8 67-Pin VFBGA
***ronik
BENAND-Flash 128Mx8 1.8V BGA67
***et
1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V
*** Americas
1Gb BE nand 1.8V Industrial BGA(6.5*8) 24nm
Parte # Mfg. Descripción Valores Precio
TC58BYG0S3HBAI6
DISTI # V99:2348_18852246		Toshiba America Electronic ComponentsNAND Flash Serial 1.8V 1G-bit 128M x 8 67-Pin VFBGA338
  • 1000:$1.7700
  • 500:$1.9270
  • 250:$2.1420
  • 100:$2.2740
  • 50:$2.5030
  • 10:$2.5470
  • 1:$2.7870
TC58BYG0S3HBAI6
DISTI # TC58BYG0S3HBAI6-ND		Toshiba Semiconductor and Storage ProductsIC FLASH 1G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 1
Container: Tray		338In Stock
  • 1014:$2.2716
  • 676:$2.4390
  • 338:$2.4482
  • 100:$2.5304
  • 50:$2.8318
  • 25:$2.8396
  • 10:$2.8850
  • 1:$3.2100
TC58BYG0S3HBAI6
DISTI # TC58BYG0S3HBAI6		Toshiba America Electronic Components1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V (Alt: TC58BYG0S3HBAI6)
RoHS: Compliant
Min Qty: 1690		Asia - 0
    TC58BYG0S3HBAI6
    DISTI # TC58BYG0S3HBAI6    		Toshiba America Electronic Components1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TC58BYG0S3HBAI6)
    RoHS: Compliant
    Min Qty: 338
    Container: Tray    		Americas - 0
    • 338:$2.1900
    • 676:$2.1900
    • 1352:$2.0900
    • 2028:$2.0900
    • 3380:$2.0900
    TC58BYG0S3HBAI6
    DISTI # 757-TC58BYG0S3HBAI6    		Toshiba America Electronic ComponentsNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
    RoHS: Compliant    		359
    • 1:$3.0600
    • 10:$2.7500
    • 50:$2.7000
    • 100:$2.4100
    • 250:$2.3400
    • 500:$2.3300
    • 1000:$2.1700
    • 2500:$2.1300
    Imagen Parte # Descripción
    TC58BYG0S3HBAI6

    Mfr.#: TC58BYG0S3HBAI6

    OMO.#: OMO-TC58BYG0S3HBAI6

    		 NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
    TC58BYG0S3HBAI4

    Mfr.#: TC58BYG0S3HBAI4

    OMO.#: OMO-TC58BYG0S3HBAI4

    		 NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
    TC58BYG1S3HBAI4

    Mfr.#: TC58BYG1S3HBAI4

    OMO.#: OMO-TC58BYG1S3HBAI4

    		 NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
    TC58BYG2S0HBAI6

    Mfr.#: TC58BYG2S0HBAI6

    OMO.#: OMO-TC58BYG2S0HBAI6

    		 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
    TC58BYG0S3HBAI4(JAH)

    Mfr.#: TC58BYG0S3HBAI4(JAH)

    OMO.#: OMO-TC58BYG0S3HBAI4-JAH--1190

    		 Nuevo y original
    TC58BYG0S8EBAIA

    Mfr.#: TC58BYG0S8EBAIA

    OMO.#: OMO-TC58BYG0S8EBAIA-1190

    		 Nuevo y original
    TC58BYG2S0HBAI6

    Mfr.#: TC58BYG2S0HBAI6

    OMO.#: OMO-TC58BYG2S0HBAI6-TOSHIBA-MEMORY-AMERICA

    		 IC FLASH 4G PARALLEL 67VFBGA Benand
    TC58BYG0S3HBAI4

    Mfr.#: TC58BYG0S3HBAI4

    OMO.#: OMO-TC58BYG0S3HBAI4-TOSHIBA-MEMORY-AMERICA

    		 1GB SLC NAND BGA 24NM I TEMP (EE Benand
    TC58BYG1S3HBAI4_REEL

    Mfr.#: TC58BYG1S3HBAI4_REEL

    OMO.#: OMO-TC58BYG1S3HBAI4-REEL-1151

    		 SLC NAND Flash Serial 1.8V 2Gbit 256M x 8Bit 63-Pin TFBGA (Alt: TC58BYG1S3HBAI4)
    TC58BYG1S3HBAI6-ND

    Mfr.#: TC58BYG1S3HBAI6-ND

    OMO.#: OMO-TC58BYG1S3HBAI6-ND-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de TC58BYG0S3HBAI6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,66 US$
    2,66 US$
    10
    2,52 US$
    25,22 US$
    100
    2,39 US$
    238,95 US$
    500
    2,26 US$
    1 128,40 US$
    1000
    2,12 US$
    2 124,00 US$
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