T1G2028536 stock, T1G2028536, T1G2028536-FS


PartNumber	T1G2028536-FS	T1G2028536-FL	T1G2028536-FL/FS 1.2-1.4GHz EVB5
Description	RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN	RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN	RF Development Tools DC-2GHz P3dB 260W Eval Board
Manufacturer	Qorvo	Qorvo	-
Product Category	RF JFET Transistors	RF JFET Transistors	-
RoHS	Y	Y	-
Transistor Type	HEMT	HEMT	-
Technology	GaN SiC	GaN SiC	-
Gain	18 dB	20.8 dB	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	36 V	36 V	-
Vgs Gate Source Breakdown Voltage	145 V	145 V	-
Id Continuous Drain Current	24 A	24 A	-
Output Power	260 W	260 W	-
Maximum Drain Gate Voltage	48 V	48 V	-
Maximum Operating Temperature	+ 250 C	+ 275 C	-
Pd Power Dissipation	288 W	288 W	-
Mounting Style	SMD/SMT	SMD/SMT	-
Packaging	Tray	Tray	-
Configuration	Single	Single	-
Operating Frequency	2 GHz	2 GHz	-
Product	RF Power Transistor	RF Power Transistor	-
Series	T1G	T1G	-
Type	GaN SiC HEMT	GaN SiC HEMT	-
Brand	Qorvo	Qorvo	-
Moisture Sensitive	Yes	Yes	-
Product Type	RF JFET Transistors	RF JFET Transistors	-
Factory Pack Quantity	25	25	-
Subcategory	Transistors	Transistors	-
Part # Aliases	1110346	1111394	-

Search Part Number : "T1G2028536", Match & Start with "T1G2028536" - Total : 5

Fabricante	Parte #	Descripción
Qorvo	T1G2028536-FS	RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
Qorvo	T1G2028536-FL	RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
	T1G2028536-FL	RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
	T1G2028536-FS	RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
	T1G2028536-FL/FS 1.2-1.4GHz EVB5	RF Development Tools DC-2GHz P3dB 260W Eval Board

T1G2028536