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| PartNumber | STW18NM60N | STW18NM60N,W18NM60N | STW18NM60ND |
| Description | MOSFET N-channel 600 V 0.27ohms 13A Mdmesh | MOSFET N-CH 600V 13A TO-247 | |
| Manufacturer | STMicroelectronics | - | ST |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 260 mOhms | - | - |
| Configuration | Single | - | Single |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | Tube |
| Series | STW18NM60N | - | N-channel MDmesh |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 600 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 1.340411 oz | - | 1.340411 oz |
| Package Case | - | - | TO-247-3 |
| Pd Power Dissipation | - | - | 130 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 18 ns |
| Rise Time | - | - | 15.5 ns |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 13 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 290 mOhms |
| Typical Turn Off Delay Time | - | - | 13 ns |
| Typical Turn On Delay Time | - | - | 55 ns |
| Qg Gate Charge | - | - | 34 nC |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
STMicroelectronics |
STW18NM60N | MOSFET N-channel 600 V 0.27ohms 13A Mdmesh | |
| STW18NM60N | MOSFET N-CH 600V 13A TO-247 | ||
| STW18NM60ND | MOSFET N-CH 600V 13A TO-247 | ||
| STW18NM60N,W18NM60N | Nuevo y original |