STW18NM60ND

STW18NM60ND
Mfr. #:
STW18NM60ND
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-CH 600V 13A TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW18NM60ND Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STW18NM60ND más información STW18NM60ND Product Details
Atributo del producto
Valor de atributo
Fabricante
S T
categoria de producto
FET - Single
Serie
MDmesh de canal N
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
130 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
18 ns
Hora de levantarse
15.5 ns
Vgs-Puerta-Fuente-Voltaje
25 V
Id-corriente-de-drenaje-continua
13 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Resistencia a la fuente de desagüe de Rds
290 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
13 ns
Tiempo de retardo de encendido típico
55 ns
Qg-Gate-Charge
34 nC
Tags
STW18NM6, STW18NM, STW18, STW1, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans MOSFET N-CH 600V 13A 3-Pin TO-247 Tube
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Power MOSFET Nchannel MDmesh II 600V 13A
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Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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MOSFET, N CH, 600V, 14A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi
***ark
MOSFET N CH 600V 14A TO-247; Transistor Polarity:N Channel; On State Resistance:270mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:7A; Termination Type:Through Hole;;RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
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Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
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Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
***nell
MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V
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IRFP17N50LPBF N-channel MOSFET Transistor; 16 A; 500 V; 3-Pin TO-247AC
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IRFP17N50L Series N-Channel 500 V 0.28 Ohm 220 W Power Mosfet - TO-247AC
***nell
MOSFET, N, 500V, 16A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 320ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 220W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.56°C/W; On State resistance @ Vgs = 10V: 320mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 64A; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V
Parte # Mfg. Descripción Valores Precio
STW18NM60ND
DISTI # 497-13887-5-ND
STMicroelectronicsMOSFET N-CH 600V 13A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
254In Stock
  • 120:$5.1345
  • 30:$5.5967
  • 1:$6.8700
STW18NM60NDSTMicroelectronicsN-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
RoHS: Compliant
300Tube
  • 600:$3.0000
STW18NM60ND
DISTI # 511-STW18NM60ND
STMicroelectronicsMOSFET N-CH 600V 0.25Ohm 13A Fdmesh II
RoHS: Compliant
0
    STW18NM60NDSTMicroelectronicsAVAILABLE1899
      STW18NM60ND
      DISTI # XSFP00000145774
      STMicroelectronics 
      RoHS: Compliant
      202
      • 34:$6.0000
      • 202:$5.4500
      Imagen Parte # Descripción
      STW18N60DM2

      Mfr.#: STW18N60DM2

      OMO.#: OMO-STW18N60DM2

      MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
      STW18N60M2

      Mfr.#: STW18N60M2

      OMO.#: OMO-STW18N60M2

      MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
      STW18NM60N

      Mfr.#: STW18NM60N

      OMO.#: OMO-STW18NM60N

      MOSFET N-channel 600 V 0.27ohms 13A Mdmesh
      STW18N65M5

      Mfr.#: STW18N65M5

      OMO.#: OMO-STW18N65M5

      MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
      STW18NK60Z

      Mfr.#: STW18NK60Z

      OMO.#: OMO-STW18NK60Z

      MOSFET N-Ch 600 Volt 16 Amp
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      Mfr.#: STW18N60M2

      OMO.#: OMO-STW18N60M2-STMICROELECTRONICS

      IGBT Transistors MOSFET POWER MOSFET
      STW18NM60N

      Mfr.#: STW18NM60N

      OMO.#: OMO-STW18NM60N-STMICROELECTRONICS

      MOSFET N-CH 600V 13A TO-247
      STW18N65M5

      Mfr.#: STW18N65M5

      OMO.#: OMO-STW18N65M5-STMICROELECTRONICS

      MOSFET N CH 650V 15A TO-247
      STW18NM60N,W18NM60N

      Mfr.#: STW18NM60N,W18NM60N

      OMO.#: OMO-STW18NM60N-W18NM60N-1190

      Nuevo y original
      STW18NM80,18NM80

      Mfr.#: STW18NM80,18NM80

      OMO.#: OMO-STW18NM80-18NM80-1190

      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de STW18NM60ND es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      4,50 US$
      4,50 US$
      10
      4,28 US$
      42,75 US$
      100
      4,05 US$
      405,00 US$
      500
      3,82 US$
      1 912,50 US$
      1000
      3,60 US$
      3 600,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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