STL18N60

STL18N60M2 vs STL18N60M6 vs STL18N60M2-CUT TAPE

 
PartNumberSTL18N60M2STL18N60M6STL18N60M2-CUT TAPE
DescriptionMOSFET N-channel 600 V, 0.278 Ohm typ., 9 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV packageMOSFET PowerFLAT 5x6 HV
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerFLAT-5x6-HV-8PowerFLAT-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V600 V-
Id Continuous Drain Current9 A9 A-
Rds On Drain Source Resistance308 mOhms308 mOhms-
Vgs th Gate Source Threshold Voltage3 V3.25 V-
Vgs Gate Source Voltage25 V10 V-
Qg Gate Charge21.5 nC16.8 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation57 W57 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameMDmeshMDmesh-
PackagingReelReel-
SeriesSTL18N60M2STF33N60DM2-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time10.6 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns7 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time47 ns28 ns-
Typical Turn On Delay Time12 ns16 ns-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STL18N60M2 MOSFET N-channel 600 V, 0.278 Ohm typ., 9 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package
STL18N60M6 MOSFET PowerFLAT 5x6 HV
STL18N60M2 MOSFET N-CH 600V 9A POWERFLAT
STL18N60M2-CUT TAPE Nuevo y original
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