PartNumber | STL18N65M2 | STL18N60M2 | STL18N60M6 |
Description | MOSFET N-channel 650 V, 0.29 Ohm typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | MOSFET N-channel 600 V, 0.278 Ohm typ., 9 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package | MOSFET PowerFLAT 5x6 HV |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-5x6-HV-8 | PowerFLAT-5x6-HV-8 | PowerFLAT-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 600 V |
Id Continuous Drain Current | 8 A | 9 A | 9 A |
Rds On Drain Source Resistance | 290 mOhms | 308 mOhms | 308 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 3.25 V |
Vgs Gate Source Voltage | 25 V | 25 V | 10 V |
Qg Gate Charge | 21.5 nC | 21.5 nC | 16.8 nC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 57 W | 57 W | 57 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Reel | Reel | Reel |
Series | STL18N65M2 | STL18N60M2 | STF33N60DM2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 12.5 ns | 10.6 ns | 9 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7.5 ns | 9 ns | 7 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 46 ns | 47 ns | 28 ns |
Typical Turn On Delay Time | 11 ns | 12 ns | 16 ns |
Minimum Operating Temperature | - | - 55 C | - 55 C |