STI10

STI100N10F7 vs STI10NM60N vs STI10N62K3

 
PartNumberSTI100N10F7STI10NM60NSTI10N62K3
DescriptionMOSFETMOSFET N-CH 600V 0.53Ohm 10A Mdmesh IIMOSFET N-CH 620V 8.4A I2PAK
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
TechnologySiSi-
SeriesSTI100N10F7STI10NM60N-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
RoHS-Y-
Mounting Style-Through Hole-
Package / Case-TO-262-3-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-650 V-
Id Continuous Drain Current-10 A-
Rds On Drain Source Resistance-550 mOhms-
Vgs th Gate Source Threshold Voltage-3 V-
Vgs Gate Source Voltage-25 V-
Qg Gate Charge-19 nC-
Minimum Operating Temperature-- 50 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-70 W-
Configuration-Single-
Packaging-Tube-
Transistor Type-1 N-Channel-
Fall Time-15 ns-
Rise Time-12 ns-
Typical Turn Off Delay Time-32 ns-
Typical Turn On Delay Time-10 ns-
Unit Weight-0.050717 oz-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STI100N10F7 MOSFET
STI10NM60N MOSFET N-CH 600V 0.53Ohm 10A Mdmesh II
STI10NM60N IGBT Transistors MOSFET N-CH 600V 0.53Ohm 10A Mdmesh II
STI100N10F7 Power MOSFET Transistor Single N-Channel 100V 80A 80Ohm 3-Pin TO-262 Tray (Alt: STI100N10F7)
STI10N62K3 MOSFET N-CH 620V 8.4A I2PAK
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