 |  | |
| PartNumber | STGB15M65DF2 | STGB15H60DF |
| Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | D2PAK-3 | D2PAK |
| Mounting Style | SMD/SMT | SMD/SMT |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V |
| Collector Emitter Saturation Voltage | 1.55 V | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 30 A | 30 A |
| Pd Power Dissipation | 136 W | 115 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | STGB15M65DF2 | STGB15H60DF |
| Packaging | Reel | Reel |
| Continuous Collector Current Ic Max | 30 A | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 uA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | - | 0.070548 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
STMicroelectronics |
STGB15M65DF2 | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss | |
| STGB15H60DF | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed | ||
| STGB15H60DF | IGBT Transistors IGBT & Power Bipola | ||
| STGB15M65DF2 | TRENCH GATE FIELD-STOP IGBT M SE | ||
| STGB15H60DF-CUT TAPE | Nuevo y original |