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STGB15M65DF2

STGB15M65DF2
Mfr. #:
STGB15M65DF2
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGB15M65DF2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGB15M65DF2 más información STGB15M65DF2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
D2PAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.55 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
30 A
Pd - Disipación de energía:
136 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGB15M65DF2
Embalaje:
Carrete
Corriente continua de colector Ic Max:
30 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
+/- 250 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Tags
STGB15, STGB1, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 15 A low loss
***ow.cn
Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-263AB
***i-Key
TRENCH GATE FIELD-STOP IGBT M SE
***ical
Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF
***ineon SCT
Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-263-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***ical
Trans IGBT Chip N-CH 650V 21A 3-Pin(2+Tab) D2PAK Tube
***ark
Igbt, Single, 650V, 21A, To-263Ab-3
***nell
IGBT, SINGLE, 650V, 21A, TO-263AB-3; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263AB; No. of
***ical
Trans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
IGBT, N-Channel, 600V, 9A, D2PAK | Infineon IRGS8B60KTRLPBF
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:167W; Package/Case:D2PAK ;RoHS Compliant: Yes
***nell
IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.2V; Power Dissipation:167W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:56A; Marking, SMD:GS8B60K; Power, Pd:167W; Time, Fall:42ns; Time, Fall Max:42ns; Time, Rise:21ns; Voltage, Vceo:600V
***ure Electronics
H Series 600 V 7 A Surface Mount Trench Gate Field-Stop IGBT - D2PAK
***ow.cn
Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ical
Trans IGBT Chip N-CH 600V 10A 88000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***et
N-channel STripFET > 30 V to 350 V
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descripción Valores Precio
STGB15M65DF2
DISTI # V79:2366_22741372		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT472
  • 10000:$0.9065
  • 5000:$0.9279
  • 2000:$0.9612
  • 1000:$1.0416
  • 500:$1.2376
  • 100:$1.4530
  • 10:$1.8167
  • 1:$2.3427
STGB15M65DF2
DISTI # V72:2272_17630167		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT452
  • 250:$1.3959
  • 100:$1.4540
  • 25:$1.6242
  • 10:$1.8182
  • 1:$2.3450
STGB15M65DF2
DISTI # V36:1790_16116214		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT0
  • 1000000:$0.8527
  • 500000:$0.8543
  • 100000:$0.9482
  • 10000:$1.0920
  • 1000:$1.1140
STGB15M65DF2
DISTI # 497-16507-1-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1945In Stock
  • 500:$1.3854
  • 100:$1.6862
  • 10:$2.0980
  • 1:$2.3400
STGB15M65DF2
DISTI # 497-16507-6-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1945In Stock
  • 500:$1.3854
  • 100:$1.6862
  • 10:$2.0980
  • 1:$2.3400
STGB15M65DF2
DISTI # 497-16507-2-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 10000:$0.9736
  • 5000:$0.9992
  • 2000:$1.0376
  • 1000:$1.1145
STGB15M65DF2
DISTI # 31081666		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT472
  • 7:$2.3427
STGB15M65DF2
DISTI # 25926821		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT452
  • 7:$2.3450
STGB15M65DF2
DISTI # STGB15M65DF2		STMicroelectronics600-650V IGBTs (Alt: STGB15M65DF2)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€0.9829
  • 6000:€1.0569
  • 4000:€1.0799
  • 2000:€1.4309
  • 1000:€2.2649
STGB15M65DF2
DISTI # STGB15M65DF2		STMicroelectronics600-650V IGBTs - Tape and Reel (Alt: STGB15M65DF2)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.9037
  • 15000:$0.9266
  • 9000:$0.9506
  • 6000:$0.9760
  • 3000:$1.0027
STGB15M65DF2
DISTI # 84Y8599		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$0.9150
STGB15M65DF2.
DISTI # 23AC9921		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$0.9150
STGB15M65DF2
DISTI # 511-STGB15M65DF2		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
RoHS: Compliant		590
  • 1:$2.1500
  • 10:$1.8300
  • 100:$1.4600
  • 500:$1.2800
  • 1000:$1.0600
  • 2000:$0.9890
  • 5000:$0.9520
STGB15M65DF2
DISTI # IGBT2105		STMicroelectronicsIGBT M Series 650V15A D2Pak
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$1.2700
  • 2000:$1.1900
  • 3000:$1.1600
  • 4000:$1.0697
Imagen Parte # Descripción
TCLAMP3302N.TCT

Mfr.#: TCLAMP3302N.TCT

OMO.#: OMO-TCLAMP3302N-TCT

 TVS Diodes / ESD Suppressors LOW CAP TVS & TELCOM INTERFACE
NSVMMBT2222AM3T5G

Mfr.#: NSVMMBT2222AM3T5G

OMO.#: OMO-NSVMMBT2222AM3T5G

 Bipolar Transistors - BJT SS SOT-723 GP TRANSISTOR
IGB15N65S5ATMA1

Mfr.#: IGB15N65S5ATMA1

OMO.#: OMO-IGB15N65S5ATMA1

 IGBT Transistors IGBT PRODUCTS
NTMFS5C628NLT1G

Mfr.#: NTMFS5C628NLT1G

OMO.#: OMO-NTMFS5C628NLT1G

 MOSFET TRENCH 6 60V NFET
STM32F030CCT6

Mfr.#: STM32F030CCT6

OMO.#: OMO-STM32F030CCT6

 ARM Microcontrollers - MCU Mainstream ARM Cortex-M0 Value line MCU with 256 Kbytes Flash, 48 MHz CPU
TCLAMP3302N.TCT

Mfr.#: TCLAMP3302N.TCT

OMO.#: OMO-TCLAMP3302N-TCT-SEMTECH

 TVS DIODE 3.3V 25V SLP2626P10
STM32F030CCT6

Mfr.#: STM32F030CCT6

OMO.#: OMO-STM32F030CCT6-STMICROELECTRONICS

 IC MCU 32BIT 256KB FLASH 48LQFP
NSVMMBT2222AM3T5G

Mfr.#: NSVMMBT2222AM3T5G

OMO.#: OMO-NSVMMBT2222AM3T5G-ON-SEMICONDUCTOR

 SS SOT-723 GP TRANSISTOR
IGB15N65S5ATMA1

Mfr.#: IGB15N65S5ATMA1

OMO.#: OMO-IGB15N65S5ATMA1-INFINEON-TECHNOLOGIES

 IGBT PRODUCTS
NTMFS5C628NLT1G

Mfr.#: NTMFS5C628NLT1G

OMO.#: OMO-NTMFS5C628NLT1G-ON-SEMICONDUCTOR

 MOSFET N-CH 60V SO8FL
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de STGB15M65DF2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,15 US$
2,15 US$
10
1,83 US$
18,30 US$
100
1,46 US$
146,00 US$
500
1,28 US$
640,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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