PartNumber | STF11N65M5 | STF11N65M2 |
Description | MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V |
Id Continuous Drain Current | 9 A | 7 A |
Rds On Drain Source Resistance | 480 mOhms | 670 mOhms |
Pd Power Dissipation | 85 W | 25 W |
Configuration | Single | Single |
Tradename | MDmesh | MDmesh II Plus |
Packaging | Tube | Tube |
Series | STF11N65M5 | STF11N65M2 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 0.011640 oz | 0.011640 oz |
Vgs th Gate Source Threshold Voltage | - | 3 V |
Vgs Gate Source Voltage | - | 25 V |
Qg Gate Charge | - | 12.5 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Product | - | Power MOSFET |
Fall Time | - | 15 ns |
Rise Time | - | 7.5 ns |
Typical Turn Off Delay Time | - | 26 ns |
Typical Turn On Delay Time | - | 9.5 ns |